2EZ75D5/TR12 Allicdata Electronics
Allicdata Part #:

2EZ75D5/TR12-ND

Manufacturer Part#:

2EZ75D5/TR12

Price: $ 0.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 75V 2W DO204AL
More Detail: Zener Diode 75V 2W ±5% Through Hole DO-204AL (DO-4...
DataSheet: 2EZ75D5/TR12 datasheet2EZ75D5/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.88200
Stock 1000Can Ship Immediately
$ 0.98
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 2W
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ75
Description

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The 2EZ75D5/TR12 single zener diode is an avalanche diode designed with an optimized temperature coefficient and low leakage current. This diode is suitable for voltage regulation, reverse polarity protection, ESD protection, and clamping applications in audio amplifiers, LCD displays, and optical communication systems.

The 2EZ75D5/TR12 single zener diode offers a wide operating range of 5.4 volts to 75 volts. It offers high surge current capability and low dynamic resistance. The operating temperature range is -55 degrees Celsius to +125 degrees Celsius.

The device is constructed with high-performing n-type epitaxial silicon. It features a zener breakdown voltage measured at 5.0V ±10 percent GTMS and an avalanche breakdown voltage measured at 75V ±10 percent Datasheet. The zener breakdown voltage is derived from the Schottky diode formed by the p-base-emitter junction.

The 2EZ75D5/TR12 single zener diode operates in a three-stage process. The first stage is the avalanche breakdown process which is initiated when the reverse bias voltage applied to the diode exceeds the critical voltage, also known as the avalanche voltage. This process results in current flowing between the diode\'s terminals. The amount of current is determined by the amount of reverse bias voltage.

The second stage is the zener effect which occurs when the reverse bias becomes large enough to cause the reverse-biased p-n junction to break down. This process results in an increase in electric field strength, coupled with an increased current flow when compared to pure avalanche breakdown. When the zener voltage is reached, the current flow decreases, allowing the diode to remain in breakdown state.

The third stage is the stabilization process, which corresponds to the voltage across the diode remaining somewhat constant. This is due to the electric field produced being blocked by the additional electrons released during the zener breakdown and avalanche processes. In addition, the thermal junction between the n-type material and the p-type material acts as a temperature compensation element, allowing the device to remain stable over a wide temperature range.

The 2EZ75D5/TR12 single zener diode is an ideal device for voltage regulation, reverse polarity protection, ESD protection, and clamping applications. Its optimized temperature coefficient and low leakage current make it ideal for use in audio amplifiers, LCD displays, and optical communication systems.

The specific data is subject to PDF, and the above content is for reference

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