2N3636UB

Introduction

2N3636UB is an high-frequency mechanical-electrical double-table-type transistors, also known as bipolar transistors. It belongs to the category of single bipolar junction transistors(BJT). With advantages of high current gain and high frequency response, 2N3636UB transistors are utilized in different kinds of applications, especially in military-level applications.

Application Field of 2N3636UB Transistors

The application field of 2N3636UB transistors mainly involves military-level electronics. The field includes defense communication, missile guidance, guidance control of airborne vehiles and so on. Generally, it is utilized in applications that require high sensitivity and high stability. It is also used in military radar as well. For example, in the guidance of air defense missile, it can be used in oscillator circuit to generate frequency signal with high stability, thus provide a stable power transimitting magnetic field to ensure the performance of overall system.
apart from military-level applications, 2N3636UB transistors also provide reliable operation in transmission and amplifier circuits. With the proper combination of other components, the circuit composed by 2N3636UB transistor can amplify signals from low level to high level in a reliable way. Due to their good performance of high frequency, high gain and stability, 2N3636UB transistors are commonly used in communication and broadcasting equipments, for instance FM and VHF receivers. As a result, these equipments can provide strong signal receival and accurate output.

Working Principle of 2N3636UB Transistors

2N3636UB transistors, as a type of bipolar junction transistor (BJT), contains three doped regions. The three doped regions are organized like a P-N diode, with base, emitter and collector connected in sequence. Two electrodes of the transistor are forward biased, while the other is reverse biaseed, so that both the emitter and collector can conduct current. During this process, current entering the base and emitter regions can be amplified after currrent flowing through the collector then output. This can be explain by the working principle of BJT, which is discussed in the following.
The working principle of BJT can be separated into two phases – cut-off phase and active phase. In cut-off phase, the voltage difference between the base and emitter regions is small, so that the current conducted by base-emitter junction and collector-base junction is negligible. This results in low current flow in the transistor. In active phase, the voltage difference between the basee and emitter regions is relatively high, so that the current flown in base-emitter junction and collector-base junction is also higher. Then, the feeded current entering the base region turns into current output in the collector, which is much larger than input. This is the amplification process of 2N3636UB transistor.

Conclusion

2N3636UB transistors belong to the single bipolar junction transistors (BJT). Its main application fields are military-level applications, communication, transmission and broadcasting equipments. It can produce high gain, high frequency and stability, especially when working in military equipments. The working principle of 2N3636UB transistor is also discussed. It is operated by two phases –cut-off phase and active phase. In conclusion, 2N3636UB transistors are able to provide reliable operation in different kind of application due to their multiple advantages and stable working principle.

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