2N3904_D28Z Allicdata Electronics
Allicdata Part #:

2N3904_D28Z-ND

Manufacturer Part#:

2N3904_D28Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625m...
DataSheet: 2N3904_D28Z datasheet2N3904_D28Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N3904
Description

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2N3904_D28Z is a type of general-purpose, epitaxial-base, NPN, transistor which belongs to Transistors - Bipolar (BJT) - Single. It is widely used in discrete and integrated circuits due to its low cost and high performance. It is widely used in electronic products and circuits such as amplifiers, converters, switching circuits and so on. The 2N3904_D28Z has two variants, the 2N3904A and the 2N3904B both of which have similar functionality. The 2N3904A has a lower gain but is relatively inexpensive and the 2N3904B has a higher gain but is more expensive. Both variants are capable of handling up to 800mA of current and dissipating up to 625mW of power.The 2N3904_D28Z can be used in many applications, including communications, audio, sensor, power, and motor control. It has a wide voltage range, from -40V to +40V. The 2N3904_D28Z has a wide range of gain which ranges from 45 to 225. It has a low noise level and is capable of switching high loads. The 2N3904_D28Z has an excellent pulse response, making it suitable for time-dependent circuits.The 2N3904_D28Z utilizes the typical BJT architecture containing two PN junctions. The transistor is divided into three regions, a base, collector, and emitter. The base is typically made up of thin metal or polysilicon layer. The collector consists of a metal or polysilicon layer which is attached to the substrate. The emitter is the layer which is thin and connected between the collector and the base. The collector and emitter are separated by a thin dielectric layer.The 2N3904_D28Z works by creating current flow between the collector and the base region. The base region controls the amount of current flow between collector and emitter. A voltage applied to the base will control the current flow going through the transistor. When a negative potential is applied to the base, very little current flows between the collector and the emitter. When a positive potential is applied to the base, a much larger current flows through the transistor. This type of transistor is used as an amplifier whose gain is proportional to the current going through the transistor.Overall, the 2N3904_D28Z is a cost-effective, reliable transistor with wide versatility and versatility applications. It has a wide range of gain and low noise, making it ideal for audio, communications, sensor, power, and motor control applications. The transistor is capable of handling high loads at low power levels and has a wide voltage range. This makes the 2N3904_D28Z a popular choice for many electronic application.

The specific data is subject to PDF, and the above content is for reference

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