2N4410_D26Z Allicdata Electronics
Allicdata Part #:

2N4410_D26Z-ND

Manufacturer Part#:

2N4410_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor NPN 80V 200mA 625mW Thro...
DataSheet: 2N4410_D26Z datasheet2N4410_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N4410
Description

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The 2N4410_D26Z is a type of transistors that falls under the category of bipolar (BJT) single devices. It is a typically used small signal NPN transistor that exhibits significant bandwidth. This makes it suitable for user in a much larger range of applications.

It is a low noise, low power, small size NPN transistor suited for operation in small signal amplifiers and switches. The 2N4410_D26Z performs well in varying current, voltage and frequency ranges, and can be used for a variety of tasks. This type of transistor has a typical collector-emitter voltage of 40V with a maximum collector current of 200mA.

The Junction-Field-Effect Transistor or JFET is especially beneficial for bipolar applications. This is because it has an extremely high input impedance, as compared to other transistors. Its wide frequency range and low internal signal gain also help make it ideal for use in amplifying any signal, digital or analog.

As the voltage applied across the transistor is the same as the collector-emitter current, there is a need to maintain the high-impedance input from the source. This is why the current gain of the transistor is so important when designing the circuit. Current gain can be very high when the 2N4410_D26Z is used in bipolar applications.

The basic principle behind the working of this type of transistor is the same as any other transistor. It relies on the depletion mode that is created when electrons and holes move through the base-emitter regions of the transistor. This movement effectively causes current to flow across a path, thus allowing the transistor to act as an amplifier.

The current-gain depends upon the ratio of the number of electrons that move through the base-emitter region to the number of holes that are moving through it. If a larger amount of electrons are moving through the emitter, then the current gain increases, whereas if the amount of holes is greater, the current gain will be lower.

When the current gain is high, the drain current of the transistor is usually much higher than that of the other transistors in the circuit. This causes the voltage across the drain and source to rise in an exponential manner, depending on the applied operating conditions. This characteristic makes the 2N4410_D26Z ideal for creating amplifiers and for switching applications.

The 2N4410_D26Z is considered to be very useful in the field of small-signal amplifiers. It can be used for various purposes including amplifying audio signals, as well as amplifying small signals in digital circuitry. It is also used in switching applications, as it can provide a very high level of control over voltage and current in an extremely efficient manner.

The 2N4410_D26Z is a classic example of a bipolar (BJT) single transistor. It is known for its high current gain and great performance in a wide range of smaller applications. By using this type of transistor, engineers and designers can craft reliable and powerful electronic circuits that deliver high quality performance without a lot of effort.

The specific data is subject to PDF, and the above content is for reference

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