2N6039

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N6039 is a three-terminal bipolar transistor designed primarily for variable gain linear amplification. It belongs to the transistors-bipolar (BJT) – single family. With its high voltage breakdown capability, this device is particularly suited for variable gain applications in linear amplification. Also, its high gain and small signal current gain further makes it ideal for a wide range of applications, such as high speed switching applications.

The 2N6039 is a NPN device and consists of an N-type semiconductor substrate body sandwiched between two metal regions. It has three terminals, namely the base, collector and emitter configuration. The base terminal functions as the control terminal and its current determines the current flowing from the collector to the emitter. The collector is the primary output of the transistor device, which is typically connected directly to a load. The emitter is the primary input terminal and is normally connected either directly to a power source or to the input circuit.

The working principle of the 2N6039 is fairly simple. When the base is positively biased, a small current flows from the base to the emitter. This current then passes to the collector terminal, where it’s amplified with the help of the device’s internal gain control. When the emitter is negatively biased, the current flow is reversed and the transistor switches off.

The 2N6039 is widely used in various electronic devices, such as linear amplifiers, high-speed switching applications, and power supply circuits. The device is particularly suitable for use in low to medium-power, high-speed applications due to its high voltage breakdown capability and high gain. Moreover, the device is highly reliable and has excellent thermal stability. Additionally, the 2N6039 is capable of working under a wide range of temperature and voltage extremes, making it a versatile device for applications where thermal and voltage stress can be a problem.

The 2N6039 is a widely used transistor device which is ideal for applications requiring high speed switching, high voltage breakdown, and linear amplification. Its high gain and excellent thermal stability make it highly reliable even when subjected to extreme thermal or voltage conditions. Thus, the 2N6039 is an excellent choice for electronic projects requiring precision control over current flow or amplification of small signals.

The specific data is subject to PDF, and the above content is for reference