2N6107 Discrete Semiconductor Products

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The 2N6107 transistor is a planar silicon n-p-n power transistor intended for general-purpose application at collector currents up to 6A, collector-base voltages up to 160V and collector-emitter voltages up to 140V. It is an ideal choice for high-power audio amplifier applications, power switchers and line-operated power switching. It has a maximum power dissipation rating of 25W and an excellent gain linearity. This device is available in two package types – TO-3 and TO-92.

The 2N6107 is a bipolar transistor that uses two layers of P-doped and one layer of N-doped semiconductor material for its operation. The design of the device allows current to flow through the P-doped materials and into the N-doped material creating a weak NPN junction. This junction allows the transistor to control the current flow by adjusting the voltage applied to the control electrode. The base-emitter junction is forward biased, while the base-collector junction is reverse biased.

The 2N6107 has a wide range of applications. It is commonly used in power switching and regulation, audio amplifiers, local oscillators and general-purpose amplification. Additionally, its low saturation voltage, low total power dissipation, and accurate current-limiting capabilities make it an ideal choice for high current applications such as switching Q-point and overload protection.

The working principle of the 2N6107 is based on the fact that the current amplified by the device is proportional to the base current applied. The base current is then converted into an amplified current that flows from the collector to the emitter. The amount of current amplified is determined by the ratio of the collector current to the base current. In this way, the 2N6107 transistor is used to control current flowing in an electronic circuit.

The current gain of the 2N6107 transistor is determined by its hFE parameter. This parameter is a measure of the current gain and is usually expressed as a ratio (hFE = Ic/Ib). The maximum hFE value is usually measured at a collector-emitter voltage of 6V and Ic of 200mA. The circuit designer can select the hFE value of the 2N6107 transistor appropriate to their application.

In summary, the 2N6107 is a versatile and cost-effective planar silicon n-p-n power transistor that is suitable for a wide range of applications. Its excellent current gain and power dissipation characteristics make it an ideal choice for general-purpose applications that require high-power audio amplifier operation, power switchers and line-operated power switching. The device is available in two package types – TO-3 and TO-92.

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