| Allicdata Part #: | 2N6650-ND |
| Manufacturer Part#: |
2N6650 |
| Price: | $ 57.72 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | PNP TRANSISTOR |
| More Detail: | Bipolar (BJT) Transistor |
| DataSheet: | 2N6650 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 52.47420 |
| Series: | * |
| Part Status: | Active |
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A 2N6650 is a single transistor bipolar junction transistor (BJT) which is commonly used for various applications. It is a general purpose, PNP type transistor, meaning it has an extra layer of metal added around the base that is used to control the output current. This added layer of metal helps to increase the gain and current handling capacity of the transistor.
In general, transistors work by allowing electrons to flow through a medium, which can be either a semi-conductor or metal. This current can then be converted into a voltage by applying a voltage to the two pins of the transistor. Transistors are used in electrical circuits to switch and control the flow of current, allowing for the manipulation of different components within the circuit.
The 2N6650 is a low voltage PNP transistor with a collector-emitter voltages up to 5V. This makes it applicable for a range of switch and control circuits, such as amplifiers and voltage regulators. It is also commonly used for power supply switching and protection, as the low voltage allows for low heat dissipation. With the added metal layer, the 2N6650 is also highly efficient, making it a reliable option for many applications, and is widely used in high-power applications such as radio, television and other electronic circuits.
As for its working principle, it operates on the same basic principle as any other transistor. A voltage applied to the base leads to an increased current through the collector-emitter junction, and when the voltage is removed, the current decreases. This variation in current leads to any amplification of current in the device, allowing it to be used in a variety of circuit designs.
The 2N6650 has a maximum collector current of 10A and collector-emitter voltage of 5V. It also has an excellent gain factor, meaning it will give good output current amplification, making it an ideal choice for many applications. The added metal layer makes the device highly efficient and reliable, as it is capable of handling high voltages and currents without heat dissipation.
In summary, the 2N6650 is a single transistor bipolar junction transistor (BJT). It operates on the same basic principle as any other transistor, allowing electrons to flow through a medium and creating a voltage difference between the two pins of the device. The added metal layer increases the gain and current handling capacity, which makes it excellent for a range of circuit designs, such as amplifiers and voltage regulators, as well as power supply switching and protection. It has an excellent gain factor and maximum collector current of 10A, with a collector-emitter voltage of 5V, making it a reliable and efficient choice for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 2N6660JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6667 | ON Semicondu... | -- | 1000 | TRANS PNP DARL 60V 10A TO... |
| 2N6673 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6660JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET JFET N-CHJFET |
| 2N6678 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6661JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6667G | ON Semicondu... | 0.62 $ | 2166 | TRANS PNP DARL 60V 10A TO... |
| 2N6660JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6661JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6661JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6660JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6648 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6668 | STMicroelect... | 0.0 $ | 1000 | TRANS PNP DARL 80V 10A TO... |
| 2N6676 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6650 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6672 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6674 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6661 | Microchip Te... | -- | 2256 | MOSFET N-CH 90V 350MA 3TO... |
| 2N6678T1 | Microsemi Co... | 173.73 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
| 2N6677 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6609 | Central Semi... | -- | 50 | TRANS PNP 140V 16A TO3Bip... |
| 2N6661-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6661JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6660 | Microchip Te... | 21.34 $ | 1148 | MOSFET N-CH 60V 0.41A TO3... |
| 2N6661-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6661JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6675 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6660-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 990MA TO-... |
| 2N6649 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6660-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6671 | Microsemi Co... | 0.0 $ | 1000 | TRANS PNP 300V 8A TO-3Bip... |
| 2N6660JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6660JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6661JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
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2N6650 Datasheet/PDF