2N7002W-TP Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	200mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 Ohm @ 50mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	115mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N7002W-TP is a common single, N-channel MOSFET that is used in many applications, including logic level shift, load switching and power control in medium-power applications. This MOSFET is a small, low-cost solution for many applications due to its high-frequency switching capabilities and its excellent thermal properties.A MOSFET is a type of field-effect transistor (FET) that utilizes gate bias to control source-drain current flow. This gate bias is usually provided by a voltage source, which allows the MOSFET to act as a switch. Since a MOSFET can be utilized as a switch, it can be used to control the conduction of current through a circuit. A single MOSFET like the 2N7002W-TP can be used to control the current flow in both directions, thus implementing a simple, binary function.The 2N7002W-TP is a single N-channel MOSFET and is thus suitable for applications that require one switch to control the flow of current between two nodes. The voltage at the gate determines the state of the MOSFET; As the gate is positive relative to the source, it will switch to the "On" state and allow current to flow from the source to the drain. As the voltage at the gate is negative relative to the source, the MOSFET will switch to the "Off" state and the drain will not be connected the the source. This is referred to as the enhancement mode, or logic level shifting, and is commonly used for applications such as logic gates and digital logic circuits.The 2N7002W-TP can also be used in applications such as load switching, where it can control the flow of current between two nodes and also reduce power consumption. This can be extremely useful in applications such as anti-lock braking systems (ABS), which require precise control over current flow and have strict requirements in terms of power consumption. The 2N7002W-TP can be set to the specific on and off states, enabling it to switch an external load on and off, thus significantly reducing power consumption when the device is not in use.The 2N7002W-TP also has excellent thermal properties, which makes it well suited for use in medium-power applications. This MOSFET can dissipate up to 200 mW of heat, which makes it suitable for applications where power dissipation can be an issue. Additionally, the maximum rated junction temperature for the 2N7002W-TP is 150°C, which is ideal for use in medium-power applications. In summary, the 2N7002W-TP is a single N-channel MOSFET that is a small and low-cost solution for many applications due to its high-frequency switching capabilities and excellent thermal properties. It can be used for logic level shifting and load switching, in addition to a range of other applications where precise control over current flow and low power consumption are critical. The 2N7002W-TP is a reliable solution for many applications and is a popular choice for medium-power applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description