2PD601ASW,115

Transistors - Bipolar (BJT) - Single

The 2PD601ASW,115 is a single, small signal, low power, NPN general purpose transistors used for both general purpose and switching applications. The device has a NPN structure with collector-base breakdown voltage of about 20V and collector-emitter breakdown voltage between 70V and 100V. It also has a maximum collector-base voltage drop of 0.2V, a maximum collector-emitter voltage drop of 0.2V, a maximum collector-emitter saturation of 0.4V, and a maximum collector current of 1A. It has a maximum junction temperature rating of 150 degrees C and a maximum storage temperature rating of 150 degrees C.

The 2PD601ASW,115 is manufactured using a silicon planar epitaxial process. The device is housed in a TO-92 package and has very small dimensions. It is suitable for use in both circuit boards and printed wiring boards.

The 2PD601ASW,115 has various applications including switching, amplification and general circuit applications. The most common use is in small signal projects such as amplifiers, DC-DC converters, audio amplifiers and other low power applications.

The working principle of the 2PD601ASW,115 is based on the NPN bipolar junction transistor. A BJT has two semiconductor materials (typically germanium or silicon) known as the P-type and N-type material. The two materials are separated by a thin layer of insulation known as a base region. When a P-type material and an N-type material are brought together, a “junction” is formed and the N-type material is said to conduct more electrons than the P-type material.

A forward-biased resistor is used to inject a few electrons into the base of the 2PD601ASW,115 transistor and they quickly diffuse through the junction and into the collector region, where they contribute to a small current flow. This process, when repeated in a circuit, can be used to amplify many tiny electrical signals.

In summary, the 2PD601ASW,115 is a single, low power, NPN general purpose transistors with various applications in the switching, amplification and general circuit applications. Its principle working is based on the NPN Bipolar Junction Transistor.