2PD601BSL,215 Allicdata Electronics

2PD601BSL,215 Discrete Semiconductor Products

Allicdata Part #:

1727-1555-2-ND

Manufacturer Part#:

2PD601BSL,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 50V 0.2A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 50V 200mA 250MHz 250m...
DataSheet: 2PD601BSL,215 datasheet2PD601BSL,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03286
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: 2PD601A
Description

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2PD601BSL,215 transistors can be classified as Bipolar Junction Transistors (BJT), specifically single types. A transistor works by controlling the current flow in a circuit by switching between off and on states, thus functioning as an amplifier or a switch. The transistor is made up of three pins, base, collector and emitter, which together regulate the amount of current flowing in the circuit when a small voltage is applied to the base.

The 2PD601BSL,215 is a low power PNP typically found in consumer electronics and computing applications. It offers an exceptionally wide gain bandwidth of 4.2 GHz and is designed to be used in high-frequency amplification or frequency modulation. Additionally, it provides better performance when compared to bipolar transistors currently in the market, being ideal for low noise, high-frequency applications.

Specifically, the 2PD601BSL,215 is a small-signal transistor can be used in a variety of transistorized circuits such as those used in op amp biasing, current verifiers, differences and subtractions, and in the power stages of RF and communication systems. It is also suitable for analog switching, small-amplitude large supply voltage applications, and even in satellite communication systems. This device also features an integrated thermal sensor shutdown system, providing protection from high temperature conditions to ensure reliability of the transistor.

When it comes to the working principle of a 2PD601BSL,215, the transistor works according to its base-collector current configuration. This type of configuration allows the transistor to function as an amplifier since the base-collector current relationship is dependent on the base voltage. The base voltage dictates the amount of current flowing in the base-collector circuit, which enables it to regulate the amount of current flow in the circuit. Additionally, the current gain of a 2PD601BSL,215 is dependent on the base current.

In the 2PD601BSL,215 package, the three pins are designed to be in different placements. This particular type of transistor is designed to have low parasitic capacitance, thus making it an efficient device. Additionally, the 2PD601BSL,215 comes in a so-called ‘through-hole’ package, which offers additional performance and long-term reliability. The through-hole configuration of the pins also ensures that the 2PD601BSL,215 is mechanically reliable and that the solder connection to the circuit board remains secure.

The 2PD601BSL,215 is an effective and reliable semiconductor device that is well-suited for use in consumer electronics, computing, and other consumer-area applications. Its features make it a great choice for applications that require high-frequency amplification or frequency modulation. Its low power and wide gain bandwidth also make it a reliable and efficient device, which can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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