| Allicdata Part #: | 2SB1123S-TD-EOSTR-ND |
| Manufacturer Part#: |
2SB1123S-TD-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 50V 2A SOT89-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 150MHz 500mW S... |
| DataSheet: | 2SB1123S-TD-E Datasheet/PDF |
| Quantity: | 3000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 2V |
| Power - Max: | 500mW |
| Frequency - Transition: | 150MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | PCP |
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The 2SB1123S-TD-E is an efficient and highly-reliable semiconductor device classified as a Transistors - Bipolar (BJT) - Single. This device is used in numerous applications and operates on a number of different principles.
These transistors are usually used for components of electronics such as switches, amplifiers, and integrated circuits. It is useful in many different industries, including automotive, aerospace, and telecommunications. In automotive applications, the 2SB1123S-TD-E is used to control the timing of ignition systems, fuel injectors, and other engine components. In aerospace and telecommunications applications, the transistor is used to enhance signal processing and data transmission. This device can be used in both analog and digital electronics.
The working principle of the 2SB1123S-TD-E involves the classic transistor concept. This type of transistor operates on the principle of current flow through a controlled base-emitter junction. The base terminal is the control element of the transistor and is connected to a voltage source. When the voltage source is in the “on” state, current will flow through the base-emitter junction and into collector, activating the transistor and enabling it to function as an amplifier, switch, or integrated circuit component. When the voltage source is in the “off” state, the current will stop flowing and traffic through the base-emitter junction will cease.
The 2SB1123S-TD-E has a relatively low drive current, making it more suited for low-power applications. It also has an extremely low saturation voltage, making it ideal for switching and signal processing operations. In addition, it has a high DC current gain, making it an excellent choice for use in linear circuits. The 2SB1123S-TD-E is also resistant to heat and radiation and is highly reliable, making it suitable for use in a variety of applications.
In conclusion, the 2SB1123S-TD-E is a reliable and versatile semiconductor device with a variety of applications, including automotive, aerospace, and telecommunications. It operates on the classic transistor concept and is capable of controlling current through a base-emitter junction. Its features of low drive current, low saturation voltage, and high DC current gain make it an excellent choice for a number of applications.
The specific data is subject to PDF, and the above content is for reference
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2SB1123S-TD-E Datasheet/PDF