Allicdata Part #: | 2SC2235-YUSNHF(M-ND |
Manufacturer Part#: |
2SC2235-Y,USNHF(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | 2SC2235-Y,USNHF(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SC2235-Y,USNHF(M is a type of transistor classified as a bipolar junction transistor, or BJT. It is a single transistor and is used in a variety of different applications, such as amplifiers and oscillators. This type of transistor is a three-terminal semiconductor device, with current and voltage gain being achievable with the connection of a DC source to its base.
The 2SC2235-Y,USNHF(M is made up of two doped semiconductor layers, which form junctions between them. It has two terminals, which are known as the collector and the emitter, and a third terminal, which is called the base. The base terminal is used to control the current flowing between the collector and emitter. By applying a small amount of current to the base, the collector-emitter current can be increased by a much larger amount.
The 2SC2235-Y,USNHF(M has a wide band of operating frequencies, has a high input impedance and is also capable of providing a good gain bandwidth. Due to its high switching speed, it can be used in applications where fast response time is needed. It is also suitable for low noise and low distortion amplification.
The 2SC2235-Y,USNHF(M is used in a variety of applications, such as audio amplifiers, voltage and current regulators, radio frequency amplifiers, switching circuits and power supplies. The transistor can also be used for high frequency amplification, as its high transition frequency makes it ideal for this application. It is also suitable for switching applications, such as in power supplies, due to its high current carrying capacity and low on-state resistance.
The 2SC2235-Y,USNHF(M also offers low power consumption, which makes it a suitable choice for use in applications where power conservation is important. It is also suitable for use in a variety of temperature ranges, making it a good choice for use in a range of different settings. In addition, it has a low switching time, making it suitable for applications where fast response time is required.
The 2SC2235-Y,USNHF(M provides optimal performance and reliability when used in a range of applications, as its high current-carrying capacity, low on-state resistance and wide operating frequency range make it extremely versatile. Its high input impedance also allows it to be used in a variety of different applications. Overall, the 2SC2235-Y,USNHF(M is a versatile and reliable transistor, making it a popular choice for use in a range of applications.
The specific data is subject to PDF, and the above content is for reference
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