2SCR544PFRAT100 Allicdata Electronics
Allicdata Part #:

2SCR544PFRAT100TR-ND

Manufacturer Part#:

2SCR544PFRAT100

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN DRIVER TRANSISTOR (CORRESPON
More Detail: Bipolar (BJT) Transistor NPN 80V 2.5A 280MHz 500mW...
DataSheet: 2SCR544PFRAT100 datasheet2SCR544PFRAT100 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.10002
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 500mW
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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The 2SCR544PFRAT100 is a specially designed, high voltage, low current PNP transistor designed for the business of linear and digital control systems. The transistor is ideal for powering and carrying applications in a wide variety of communication equipment, remote control and measurement systems, battery-powered systems, and other applications. It is constructed using high quality semiconductor material, ensuring excellent voltage and temperature stability, and advanced circuit design to ensure reliability, versatility and ease of use. By understanding the application field and working principle of the 2SCR544PFRAT100, users can make the most of the transistor\'s excellent performance.

Application Field

The 2SCR544PFRAT100 is specially designed for use in high voltage and low current applications, such as remote control and measurement systems, battery-powered systems, and others. It features excellent voltage and temperature stability and advanced circuit design, allowing for reliable and efficient operation in such applications. For example, the transistors can be used in battery-powered systems to regulate current draw and prolong battery life. Similarly, the transistor is suitable for high frequency switching applications, such as serving as an amplifier with low-noise operation. In addition, the transistor is also suitable for high-gain switching applications, such as in amplifiers, oscillators, and other circuits.

Working Principle

The 2SCR544PFRAT100 is built using two active semiconductor materials, a P-type and N-type, which work together to form a virtual junction. When the correct amount of voltage is applied to the junction, current starts to flow, and as a result electrical power is generated. This is the working principle of the transistor, where current flows through the transistor, coupled with a potential difference across the device, to generate an output voltage. The output voltage is determined by the amount of current that is flowing, and this is modulated by the biasing voltage applied to the device.

The 2SCR544PFRAT100 has two connection points, referred to as the collector and emitter, while the third connection point is known as the base. The current flow through the transistor is controlled by the base voltage, which is used to adjust the current flow of the collector and emitter. When the base voltage is low, the current between the collector and emitter is reduced. Conversely, when the base voltage is increased, the current between the collector and emitter is increased. This allows the user to modulate the current output of the transistor for various needs.

Conclusion

In conclusion, the 2SCR544PFRAT100 is a specially designed, high voltage, low current PNP transistor suitable for use in applications such as remote control and measurement systems, battery-powered systems, and others. It features excellent voltage and temperature stability and advanced circuit design, allowing for reliable and efficient operation in said applications. Furthermore, the working principle of the 2SCR544PFRAT100 entails using two active semiconductor materials, a P-type and N-type, which work together to form a virtual junction and generate an output voltage that is modulated by the biasing voltage applied to the device. Users can thus make the most of the excellent performance of the 2SCR544PFRAT100 by understanding its application field and working principle.

The specific data is subject to PDF, and the above content is for reference

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