2SD1803S-TL-H Allicdata Electronics
Allicdata Part #:

2SD1803S-TL-H-ND

Manufacturer Part#:

2SD1803S-TL-H

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 5A TP-FA
More Detail: Bipolar (BJT) Transistor NPN 50V 5A 180MHz 1W Surf...
DataSheet: 2SD1803S-TL-H datasheet2SD1803S-TL-H Datasheet/PDF
Quantity: 1000
700 +: $ 0.37328
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA
Base Part Number: 2SD1803
Description

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2SD1803S-TL-H is one of the leading bipolar junction transistors (BJTs). It is commonly used transistors for linear applications due to its high performance for a wide range of possible configurations and its robustness in terms of power output and thermal management. This type of transistor is ideal for a wide range of analog and digital integrated circuits.

Application Field of the 2SD1803S-TL-H

The 2SD1803S-TL-H is designed for low-noise and high-frequency operation. It is typically used in amplifier circuits, Class A-B audio amplifiers and other linear circuits. The small size and high speed of the 2SD1803S-TL-H make it popular for use in small, compact circuit designs. This type of transistor is also ideal for circuits where a low harmonic distortion is desired.

The 2SD1803S-TL-H is also suitable for high-speed switching applications. It can be used for logic level switching and for fast switching in power circuits. In addition, the 2SD1803S-TL-H can be used for controlling power management circuits, for example for driving an LED display or for motor control.

Working Principle of the 2SD1803S-TL-H

The 2SD1803S-TL-H is a bipolar NPN transistor with a high current transfer ratio. It consists of three layers of semiconductor material arranged in the form of an N-type base layer, a collector layer and an emitter layer. It is designed to have the ability to amplify the current passing through it by controlling the base current.

The operation of the 2SD1803S-TL-H is based on the principle of the current flow between two wires. The base of the transistor is connected to the input wire and the collector is connected to the output wire. A small base current can be used to control a larger collector current, which is the basic principle of amplification.

The current gain of the 2SD1803S-TL-H is also known as its hFE or current transfer ratio. This is defined as the ratio of the collector current to the base current and can be as high as 250. This means that a very small amount of base current can control a larger amount of collector current.

The collector voltage of the 2SD1803S-TL-H is also relatively low. This allows it to be used in low-voltage circuits while still maintaining adequate current gain. This type of transistor also features wide frequency area coverage and improved power dissipation.

Conclusion

The 2SD1803S-TL-H is one of the leading bipolar junction transistors (BJTs) for analog and digital applications. It is designed for low-noise, high-frequency and high-speed operations. It features high current transfer ratio and low collector voltage. This makes the 2SD1803S-TL-H ideal for amplifier circuits, Class A-B audio amplifiers, high-speed switching and power management circuits where low harmonic distortion is desired.

The specific data is subject to PDF, and the above content is for reference

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