2SD1819GQL Allicdata Electronics
Allicdata Part #:

2SD1819GQLTR-ND

Manufacturer Part#:

2SD1819GQL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 50V 0.1A SMINI-3
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 150m...
DataSheet: 2SD1819GQL datasheet2SD1819GQL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Base Part Number: 2SD1819
Description

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The 2SD1819GQL is a NPN silicon planar epitaxial transistor and is classified as belonging to the Single, Bipolar (BJT) family of transistors. It is manufactured by various electronics companies and offers an array of features that make it ideal for a variety of applications. The transistor offers low noise figure, wide bandwidth, high frequency characteristics, high speed switching and low power dissipation.

The 2SD1819GQL can be used in a variety of different applications, including switching and amplification, as well as in high speed logic circuits and line/codec receivers and transmitters. It has a collector current of 1A and a maximum voltage rating of 30V. It has a maximum transition frequency of 250MHz, which makes it suitable for high frequency applications. It is also ideal for high speed switching applications due to its low power dissipation.

The transistor is an epitaxial type, which means it is formed from a single crystal of silicon that is grown in an epitaxial layer. The inherent properties of the single crystal offers a number of advantages, including lower leakage currents, better thermal stability and higher breakdown voltages. The epitaxial layer of the 2SD1819GQL provides excellent uniformity and repeatability of electrical characteristics within the same transistor.

The 2SD1819GQL is a bipolar transistor, which means that its operation is based on the movement of electrons and holes, the two charge carriers in a semiconductor. This movement is controlled by a base biasing, which is created by connecting a voltage source to the base of the transistor. Since the transistor is an NPN type, the majority carriers are electrons and the minority are holes. When a voltage is applied to the base terminal, electrons in the base region are moved towards the collector region, while holes are moved away from the collector. This results in a current flow between the base and the collector. This current flow increased with an increase in the base voltage.

The 2SD1819GQL\'s operation can be further enhanced by adding additional external components, such as resistors and capacitors. This allows for added control over the current gain, voltage gain and frequency response characteristics. It also allows for additional protection from the external environment, such as from electrical interference.

The 2SD1819GQL transistor is an ideal choice for a wide range of applications, from high speed logic circuits to amplification and switching. It also has a number of features that make it highly suitable for high frequency applications, such as low power dissipation, low noise figure and wide bandwidth. And, due to its epitaxial construction, it provides excellent uniformity and repeatability of electrical characteristics.

The specific data is subject to PDF, and the above content is for reference

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