2SK3199 Allicdata Electronics
Allicdata Part #:

2SK3199-ND

Manufacturer Part#:

2SK3199

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 500V TO-220F
More Detail: N-Channel 500V 5A (Ta) 30W (Tc) Through Hole TO-22...
DataSheet: 2SK3199 datasheet2SK3199 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Vgs (Max): ±30V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The 2SK3199 is a high power switch, containing P-type MOSFET semiconductor embedded on it. It is a single device, with three contacts, namely the drain, gate and source. It is designed for high voltage, high current and low resistance applications. Its main use is for power switching, and due to its characteristics, it can be used for a variety of applications, ranging from industrial and automotive, to consumer electronics.

One of the key characteristics of the 2SK3199 is its high-voltage operation. It has a maximum drain to source voltage of up to 600 V, which makes it suitable for power switching applications in industrial, automotive and consumer electronics. Furthermore, it has a gate to source voltage range of -10 V to +20 V, allowing for precise control of the gate. Additionally, its source-drain on-resistance of 0.4 ohm makes it ideal for low impedance applications, such as in some audio amplifiers.

The working principle of the 2SK3199 is based on MOSFET technology. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, and is the most widely used type of FET. The MOSFET is composed of an insulated drain-source region, and when a voltage is applied between the gate and source, it creates an electric field, which polarizes the underlying layer of semiconductor. This in turn changes the resistance of the drain-source junction and allows current to flow between the drain and source.

The source of the 2SK3199 is connected to the load and the drain to the power source. This means that when the gate voltage is applied (usually by a control circuit), the MOSFET turns on, allowing current to flow from the power source to the load. When the gate voltage is removed, the MOSFET turns off, stopping the current flow. By controlling the gate voltage, the 2SK3199 can be used for power switching in a variety of applications.

The 2SK3199 is an ideal device for power switching applications. Its high voltage and current capabilities and low resistance make it suitable for a wide range of applications, from industrial and automotive to consumer electronics. Moreover, its MOSFET technology allows for precise control over the gate voltage, which makes it ideal for power switching tasks.

The specific data is subject to PDF, and the above content is for reference

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