Allicdata Part #: | 475-102N21A-00-ND |
Manufacturer Part#: |
475-102N21A-00 |
Price: | $ 26.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS-RF |
Short Description: | RF MOSFET N-CHANNEL DE475 |
More Detail: | RF Mosfet N-Channel 1800W DE475 |
DataSheet: | 475-102N21A-00 Datasheet/PDF |
Quantity: | 223 |
1 +: | $ 23.66280 |
10 +: | $ 21.88750 |
100 +: | $ 18.69310 |
Series: | DE |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | -- |
Gain: | -- |
Current Rating: | 24A |
Noise Figure: | -- |
Power - Output: | 1800W |
Voltage - Rated: | 1000V |
Package / Case: | 6-SMD, Flat Lead Exposed Pad |
Supplier Device Package: | DE475 |
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The 475-102N21A-00 is a bipolar junction transistor (BJT) with high power output and a wide range of uses. It is widely used in the RF (radio frequency) field, particularly for remote control applications, where its high power output makes it ideal for transmitting data signals over long distances. In addition, it is used in switching applications where its fast switching speed and low noise characteristics are advantageous. The device is composed of two PN junction chips that are connected in a specific way to provide high output current, low noise, and high frequency capability. The device also has an intrinsic gain of up to 20 dB, which makes it suitable for highly efficient amplification of signals.
The device\'s basic working principle is based on a phenomenon known as minority carrier injection. In this phenomenon, an electron from a material with a high work function (usually the gate region of a transistor) injects into a material with a lower work function (the substrate region of the transistor). The electron\'s energy is then equalized throughout the transistor thus causing a current flow. This current flow or injection process can be used to modulate voltage and current signals as they pass through the transistor. The resulting output is then used to directly control a circuit\'s logical operations, or to transmit data signals in remote control applications.
In RF applications, the device\'s high power output and wide range of uses make it ideal for transmitting data signals over long distances. Furthermore, its intrinsic gain of up to 20 dB adds additional versatility. The device is especially suitable for use in radar and cordless telephone communication systems, where its high power output is particularly advantageous. Moreover, it can be used in switching applications where its fast switching speed and low noise characteristics can be exploited to minimize interference and improve system performance.
In addition to its use in RF applications, the 475-102N21A-00 is also widely used in industrial, automotive, and consumer applications due to its robust structure and reliable performance. In industrial applications, the device can be used as an interface between different logic circuits or as a current regulator. In automotive applications, it is often used to control the speed and direction of motion in robots, electronic actuators, and servos. Lastly, in consumer applications, it can be used to control the voltage and current of household appliances and electronic devices.
Overall, the 475-102N21A-00 is a high power and versatile transistor that is suitable for many applications in the RF, industrial, automotive, and consumer sectors. Its high power output, wide range of uses, and intrinsic gain of up to 20 dB make it an ideal choice for transmitting data signals over long distances, controlling the speed and direction of motion in robots, and regulating the voltage and current of household appliances.
The specific data is subject to PDF, and the above content is for reference
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