62-0063PBF Allicdata Electronics
Allicdata Part #:

62-0063PBF-ND

Manufacturer Part#:

62-0063PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 12V 15A 8-SOIC
More Detail: N-Channel 12V 15A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: 62-0063PBF datasheet62-0063PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FET (Field Effect Transistor), also known as field effect transistor, is an active device used in electronic circuits. It has the characteristics of large current, low power consumption and low noise. Generally speaking, FET consists of a source, a drain and a gate. It mainly works by controlling voltage and current in the circuit.

The 62-0063PBF is a particularly well-known version of the FET. It’s a single-gate (JFET) type of N-channel field effect transistor, with a drain to source breakdown voltage (VDSS) of 75 volts and a gate to source breakdown voltage of 20V. It can handle up to 30V of drain to source voltage and; and has a continuous drain current of 3A. In addition to this, it has an total gate charge of 34nC and a maximum junction temperature rating of 150C.

The 62-0063PBF is well-suited to a broad range of applications, such as power management, audio amplifiers, data communications, digital switching, and automotive applications. For example, in power management, the 62-0063PBF can be used to control power in an amplifier, switching regulator or power supply. In audio applications, the FET can be used to boost the signal-to-noise ratio by amplifying the voltage from the microphone output. In data communications applications, the FET can also be used as a switch to directly control the flow of data between the system and the transceiver.

In terms of working principle, the 62-0063PBF utilizes the fundamental principle of the ‘gate effect’ to control the current flow in the transistor. This gate effect can be seen as the transistor’s ability to turn the flow of current ‘on’ and ‘off’ by applying a voltage to the gate terminal. With this principle, a low or negative voltage to the gate will turn the transistor off, while a higher or positive voltage will turn the transistor on.

By controlling the voltage applied to the gate terminal, the current flow can be either on or off, enabling the 62-0063PBF to act as a switch. Thus, based on the design of the circuit, the 62-0063PBF can either source current (i.e. provide current) to the circuit or block the current flow by turning off. Additionally, the transistor can be used in either a linear or switching mode, depending on the design of the circuit.

In conclusion, the 62-0063PBF is an extremely versatile Field Effect Transistor, with a wide range of applications, such as power management, audio amplifiers, data communications, digital switching, and automotive applications. The operating principle of this device utilizes the gate effect to control the current flow through the transistor, enabling the FET to be used as either a switch or in linear mode.

The specific data is subject to PDF, and the above content is for reference

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