| Allicdata Part #: | 800-2304-ND |
| Manufacturer Part#: |
70V24S55PF |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 64K PARALLEL 100TQFP |
| More Detail: | SRAM - Dual Port, Asynchronous Memory IC 64Kb (4K ... |
| DataSheet: | 70V24S55PF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Asynchronous |
| Memory Size: | 64Kb (4K x 16) |
| Write Cycle Time - Word, Page: | 55ns |
| Access Time: | 55ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 100-LQFP |
| Supplier Device Package: | 100-TQFP (14x14) |
| Base Part Number: | IDT70V24 |
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Memory is an essential component of modern day technology, providing a way to store data and instructions. 70V24S55PF is a type of memory which includes an array of non-volatile cells that can keep their contents in the absence of power. The memory component is used in a variety of applications including embedded systems, computer memory, sensors, and other electronic devices.
An application field for 70V24S55PF is for embedded systems where a dedicated storage component is needed for stable storage and operations. The component’s ability to maintain its stored data in the absence of power makes it well-suited for embedded applications, as the component can ensure operations are recovered in a system power outage.
Another application for 70V24S55PF is as computer memory. Computer memory, such as RAM (random access memory) and ROM (read-only memory), is essential for storing data used in operations. 70V24S55PF can be used in this capacity in situations that would benefit from added stability and the lack of the need to refresh data. Additionally, 70V24S55PF can be used as a combination of RAM and ROM, providing the ability to use data both for operations and for storage.
The working principle of 70V24S55PF is based on non-volatile cells that behave like transistors, but are actually the junction of two diodes . A cell utilizes only two states, a “0” or a “1”. When power is applied, the cells create a matrix of tiny memory transistors, forming a field-effect transistor (FET). FETs are built on the principle that the current and voltage at the drain is controllable, when voltage is applied to the gate of the transistor. The gate voltage effectively controls the flow of current between the source and drain, changing which state the cell is in. In this way, the cells can be used to store and maintain data.
Furthermore, 70V24S55PF utilizes the concept of a writeable control gate (WCG) threshold voltage array. The WCG threshold voltage can be fine tuned to control the cell’s voltage, which in turn controls the operation of the cell. When a voltage is applied to the WCG, the cell can be switched to either the “0” or “1” state, depending on the applied voltage. Once the voltage is removed from the gate, the cell will maintain the state it was set to.
Also, for 70V24S55PF a read cycle is required to sample the voltage in order to determine a cell’s stored value. This is done by applying a read voltage and checking the current carrying capacity of the cell. Cells with low carrying capacity represent a “1” state, while those with higher capacity represent a “0” state. The advantage of using this system is that data can be stored and recalled without the need to continuously refresh the contents, allowing the component to maintain its data even with no power.
In conclusion, 70V24S55PF is a type of non-volatile memory that provides data storage and retrieval in the absence of power. Typical applications of the component include embedded systems, computer memory, and other electronic devices that require stable storage. The component operates on a principle whereby the two states of a cell are determined by the flowing current and the applied gate voltage. It also utilizes a writeable control gate (WCG) feature that can be used to fine-tune a cell’s voltage. Through these principles, 70V24S55PF provides reliable and stable memory operations that require no power to maintain its contents.
The specific data is subject to PDF, and the above content is for reference
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70V24S55PF Datasheet/PDF