| Allicdata Part #: | 70V27L35PFI8-ND |
| Manufacturer Part#: |
70V27L35PFI8 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 512K PARALLEL 100TQFP |
| More Detail: | SRAM - Dual Port, Asynchronous Memory IC 512Kb (32... |
| DataSheet: | 70V27L35PFI8 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Asynchronous |
| Memory Size: | 512Kb (32K x 16) |
| Write Cycle Time - Word, Page: | 35ns |
| Access Time: | 35ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 100-LQFP |
| Supplier Device Package: | 100-TQFP (14x14) |
| Base Part Number: | IDT70V27 |
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Memory is the ability of a computer to store, retain, and recall information. Memory is of two types: primary memory and secondary memory. Primary memory is a computer system\'s internal storage, which stores information electronically, such as the RAM and ROM, while secondary memory is non-volatile storage that stores information outside of the system, such as a hard disk. The 70V27L35PFI8 is an integrated circuit that is a type of semiconductor memory and is mainly used in the manufacture of DRAM (Dynamic random access memory).
Application Field
The 70V27L35PFI8 is designed for use in high-density DRAM applications, such as in embedded systems and as part of a computer system. It is also used in mobile phones, tablets and other portable devices, as well as in digital cameras, where its low power consumption makes it ideal. It is also used in industrial and automotive applications, such as in-car navigation systems, where its low power consumption is critical. The 70V27L35PFI8 can store up to 32KB of data, which is sufficient for small-scale embedded systems.
Working Principle
The 70V27L35PFI8 is a CMOS single-voltage DRAM memory. It operates on a single 3.3 or 5.0 V supply voltage, and it is therefore suitable for low-voltage systems such as those found in mobile devices. The 70V27L35PFI8 has a maximum data transfer rate of 30 Mbits/s, and is capable of up to 75 ns access time. A portion of the internal logic allows the persistent storage of the RAM contents without the need for a separate battery.
The 70V27L35PFI8 operates using the self-refresh mode, which is a power-saving mode of operation. In self-refresh mode, the data stored in the memory is constantly being refreshed, maintaining the contents of the DRAM while the chip is in a standby mode. As the memory chips do not need to be continuously accessed, the power consumption is reduced. This mode of operation is particularly useful for mobile devices.
The 70V27L35PFI8 also employs an error correcting code, which is a mechanism that detects and corrects any single-bit errors in an encoded data stream. This ensures the accuracy of the data stored in the memory. The 70V27L35PFI8 also provides cycle redundancy checking (CRC), a method of error detection that checks the integrity of a data transfer by checking the number of bits in a data stream.
The 70V27L35PFI8 is an efficient and reliable memory chip, suitable for use in a wide range of applications. Its low power consumption, data transfer rate, and error detection features make it ideal for embedded systems and mobile devices, where efficiency and reliability are paramount.
The specific data is subject to PDF, and the above content is for reference
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70V27L35PFI8 Datasheet/PDF