A2G22S160-01SR3 Allicdata Electronics
Allicdata Part #:

A2G22S160-01SR3-ND

Manufacturer Part#:

A2G22S160-01SR3

Price: $ 79.80
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: IC TRANS RF LDMOS
More Detail: RF Mosfet 48V 150mA 2.11GHz 19.6dB 32W NI-400S-24...
DataSheet: A2G22S160-01SR3 datasheetA2G22S160-01SR3 Datasheet/PDF
Quantity: 1000
250 +: $ 72.54310
Stock 1000Can Ship Immediately
$ 79.8
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Frequency: 2.11GHz
Gain: 19.6dB
Voltage - Test: 48V
Current Rating: --
Noise Figure: --
Current - Test: 150mA
Power - Output: 32W
Voltage - Rated: 125V
Package / Case: NI-400S-240
Supplier Device Package: NI-400S-240
Description

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The A2G22S160-01SR3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed primarily for use in the communications industry, specifically radio frequency (RF) applications. MOSFETs are a type of transistor that controls current flow in an electronic circuit. A MOSFET has numerous applications in digital circuits, radio frequency amplifiers, and RF switching.

MOSFETs provide excellent input impedance, fast switching times, and high-current capability. They are used for a variety of purposes, including amplifying audio signals, controlling motor speed and direction, regulating current in LEDs, and switching power to circuit components. The A2G22S160-01SR3 takes advantage of these characteristics to be particularly suitable for RF applications. It is capable of handling up to 160 amps of current and operates with a very low on-state resistance, making it a viable choice for radio frequency amplifiers and switching.

The A2G22S160-01SR3 has an integrated gate protector and is available in both 3-terminal and 5-terminal configurations. The 3-terminal version features an additional terminal for the gate protector, which guards against voltage surges and electrostatic discharges. The 5-terminal version includes two drain connections and two gate connections, allowing for connections to multiple other components. Both versions are rated for operation at a maximum voltage of 600 volts and at a maximum frequency of 375 KHz.

The A2G22S160-01SR3 is designed for use with an appropriate driver circuit in order to control the flow of current. The gate needs to be connected to a voltage source in order to control the flow of current, and this gate voltage must be greater than the power supply voltage in order to turn the device on. The gate voltage also affects the current flow, meaning that by adjusting the gate voltage, it is possible to control the amount of current that can be passed through the MOSFET.

In terms of its application in radio frequency applications, the A2G22S160-01SR3 can be used as a power amplifier, a switch, or an oscillator. as a power amplifier, it can be used to amplify small signals, such as those from antennas, and to increase the output power. As a switch, it can be used to turn devices and circuits on and off, allowing for efficient control of current flow without introducing unwanted noise or loss of power. Finally, as an oscillator, it can be used to generate continuous frequencies in the range of 375 KHz.

The A2G22S160-01SR3 is a highly versatile MOSFET that has become a popular choice for use in radio frequency applications due to its low on-state resistance and high current capability. Its integrated gate protector can also guard against voltage surges and electrostatic discharges. It is available in both 3-terminal and 5-terminal configurations, allowing it to be easily integrated into existing radio frequency circuits. With the right driver circuit, it can be used as a power amplifier, switch, or oscillator.

The specific data is subject to PDF, and the above content is for reference

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