Allicdata Part #: | AO4447AL_201-ND |
Manufacturer Part#: |
AO4447AL_201 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 8SOIC |
More Detail: | P-Channel 30V 17A (Ta) 3.1W (Ta) Surface Mount 8-S... |
DataSheet: | AO4447AL_201 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 15V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
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The AO4447AL_201 is a superb power MOSFET transistor intended for use in a wide variety of applications. This efficient and powerful component can handle more current than regular transistors, and is thus capable of creating a much higher voltage. Moreover, MOSFET transistors are renowned for their low power loss and excellent performance even when dealing with high voltages. This article provides an overview of the AO4447AL_201, its application fields, and its working principle.
First, the AO4447AL_201 is a P-channel enhancement mode MOSFET that provides superior thermal stability, current handling capabilities, and safe operation. It is designed for use in voltage controlled switching applications, with a nominal drain-source impedance of 9.8 ohms and a maximum drain current of 25.0A. It can also handle up to 100V of gate-source voltage and a peak drain voltage of up to 100V. The AO4447AL_201 is well-suited for application fields that require a switching transistor with high current capacity, such as power supplies, DC-DC converters, and motor controls.
As for the AO4447AL_201’s operation, the transistor is controlled by a gate voltage. In essence, this means that the transistor can be switched on or off by applying a voltage to the gate terminal. Applying a positive voltage causes the gate to switch on the transistor and allows current to flow. Conversely, a negative voltage switches the transistor off, thus blocking the current. It should be noted that, due to its low on-resistance, the AO4447AL_201 is not suitable for switching applications with high voltage or current density.
The AO4447AL_201 is also equipped with several safety features. For example, the integral over-temperature protection element shuts off the MOSFET transistor when the specified temperature is exceeded. Additionally, the U2P channel design helps to reduce the risk of thermal runaway by displacing the charge carriers away from the substrate base when subjected to high currents. As such, the AO4447AL_201 is highly reliable and can be used in a wide range of applications, such as lighting, heating, and industrial controls.
In conclusion, the AO4447AL_201 is a versatile and powerful MOSFET transistor that is well-suited for high current applications. It is equipped with numerous safety features and can handle up to 25A of maximum drain current. Moreover, it is exceptionally reliable and offers superior thermal stability, making it ideal for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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