Allicdata Part #: | AOD208-ND |
Manufacturer Part#: |
AOD208 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 18A TO252 |
More Detail: | N-Channel 30V 18A (Ta), 54A (Tc) 2.5W (Ta), 62W (T... |
DataSheet: | AOD208 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2210pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 54A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AOD208 application field and working principle
AOD208 is a lateral double-diffused metal-oxide-semiconductor field-effect transistor (DMOSFET). It is a type of insulated-gate field-effect transistor (IGFET) that is considered a single-package power transistor. It has a wide range of applications and is used for various high-performance circuits, especially in electric vehicles. In this article, we will discuss the application areas and principles of operation of AOD208.
Application Fields:
The AOD208 is used in a variety of industries, including automotive, communications, industrial, security systems, medical and consumer electronics. It is used in power supplies, battery management, automotive powertrain systems and motor control systems. Additionally, it is suitable for a wide range of applications such as high-efficiency switching, low-noise amplifier, PWM and power management.
Working Principle:
The AOD208 uses n-channel (NMOS) and p-channel (PMOS) field-effect transistors (FETs) along with two back-flow diodes. It has two terminals; the gate terminal and the source terminal. When the gate terminal is charged, current will flow from the source terminal to the drain terminal. Depending on whether the voltage applied to the gate reaches the threshold voltage or not, the field-effect transistor will be in either cutoff or saturation state. The AOD208 is also equipped with a two-level clamping function, which eliminates the need for extra Zener diodes for over-voltage protection. This reduces power consumption and helps keep the circuit stable and reliable. In addition, AOD208 features low on-resistance, low gate charge and low gate input capacitance, making it suitable for high performance applications.
Conclusion:
In summary, the AOD208 is a powerful and reliable transistor that can be used in a wide range of applications. It offers low on-resistance and low gate charge, making it suitable for high performance applications. Additionally, it is also equipped with a two-level clamping function, eliminating the need for extra Zener diodes for over-voltage protection. Therefore, the AOD208 is an ideal choice for various industries and for various circuits.
The specific data is subject to PDF, and the above content is for reference
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