Allicdata Part #: | AOK40B65H2AL-ND |
Manufacturer Part#: |
AOK40B65H2AL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | IGBT 650V 40A TO-247 |
More Detail: | IGBT 650V 80A 260W Through Hole TO-247 |
DataSheet: | AOK40B65H2AL Datasheet/PDF |
Quantity: | 990 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Series: | Alpha IGBT™ |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 40A |
Power - Max: | 260W |
Switching Energy: | 1.17mJ (on), 540µJ (off) |
Input Type: | Standard |
Gate Charge: | 61nC |
Td (on/off) @ 25°C: | 30ns/117ns |
Test Condition: | 600V, 40A, 7.5 Ohm, 15V |
Reverse Recovery Time (trr): | 315ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The AOK40B65H2AL is a IGBT, which stands for insulated-gate bipolar transistor. IGBTs are made of two components, an insulated gate and a bipolar transistor, that have been merged into a single semiconductor device. They exhibit properties of both a transistor and a MOSFET, combining the fast switching performance of the latter with the high breakdown voltage of the other. The AOK40B65H2AL is a single IGBT and is designed for low on-state resistance and high surge current.
The AOK40B65H2AL is an ideal device for high power applications such as power supplies, motor drives, and lighting. It is highly efficient in these applications because it has low conduction losses, a low static power dissipation, and low switching losses when compared to other power devices. Additionally, it is capable of withstanding high surge currents with minimal losses, allowing it to be well-suited for power switching applications.
The working principle of the AOK40B65H2AL is similar to that of other IGBTs. When a voltage is applied to the gate, the resistance of the device will become extremely low, allowing a high current to flow through the device. When the gate voltage is removed, the device will turn off and the current will be stopped. This switching speed enables the device to be used for power switching applications.
The AOK40B65H2AL is also designed to have a high C-level running temperature and an integrated anti-parallel diode. The temperature ensures that the device remains reliable and works efficiently even when operating in extreme temperatures. The integrated anti-parallel diode helps protect the device from reverse voltages and thus protect the system from electrical failures.
The AOK40B65H2AL has a wide range of applications and is used in industries such as automotive, aeronautics, white goods, and power generation. It can be used to power solar panels, drive electric motors, control lighting systems, as well as powering no-critical systems such as cellular phones and laptops.
In conclusion, the AOK40B65H2AL is a single IGBT with features that make it an ideal device for high power applications such as power supplies, motor drives, and lighting. It has an integrated anti-parallel diode to protect the device from reverse voltages and is capable of withstanding high surge currents. The device has a wide range of applications and is used in industries such as automotive, aeronautics, white goods, and power generation.
The specific data is subject to PDF, and the above content is for reference
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