Allicdata Part #: | AON5802B_101-ND |
Manufacturer Part#: |
AON5802B_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH DUAL DFN |
More Detail: | Mosfet Array Surface Mount 6-DFN-EP (2x5) |
DataSheet: | AON5802B_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Lead Exposed Pad |
Supplier Device Package: | 6-DFN-EP (2x5) |
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AON5802B_101, designed and developed by Alpha and Omega Semiconductor, is a high-performance, low-voltage and low-power, logic-level n-channel, complementary metal-oxide-semiconductor (CMOS) transistor array.
AON5802B_101 are available in a 6-pin DFN package, which has a 0.5mm bump pitch, contact pad, and a decrease in parasitic capacitance. AON5802B_101 provides high noise immunity, low-power consumption, low-output resistance, high-current-driving capability, and a wide-range operation for low-voltage designs. Internally, AON5802B_101 uses two n-channel power MOSFETs connected back-to-back in the same package and these two MOSFETs are controlled by one logic signal.
AON5802B_101\' primary application fields are LED display, LED backlight, industrial power control, sound devices, general lighting, and voice control devices. Its application field is limited to the area where only one input control is needed. Also, it can be applied to power control, voltage-control switch, sequential circuit, clock, and flip-flop control.
The working principle of AON5802B_101 is very simple. AON5802B_101 contains two n-channel power MOSFETs connected in series with one controlling the switching of the other. The internal connections of the transistors inside the AON5802B_101 are such that the internal gate structure of each transistor is connected inversely, i.e the G and S terminals of one MOSFET are connected to the S and G terminals of the other MOSFET, respectively. When a logic signal is applied to the input, the n-channel MOSFET connected to the logic signal will turn on and the other n-channel MOSFET will turn off. This will switch the circuit on or off as desired.
AON5802B_101 has low-cost, low-noise, low-power, and low-output resistance features. It has the advantage of reduced system cost due to the elimination of an extra control signal for operating the two MOSFETs inside the package. AON5802B_101 is ideal for applications where a low-power switch is required. With the improved performance from AON5802B_101, it is widely used in a variety of applications.
In conclusion, AON5802B_101 is a high-performance, low-voltage, low-power, logic-level n-channel, complementary metal-oxide-semiconductor (CMOS) transistor array. It provides high noise immunity, low-power consumption, low-output resistance, high-current-driving capability, and a wide-range operation for low-voltage applications. Its primary application fields are LED display, LED backlight, industrial power control, sound devices, general lighting, and voice control devices. With its improved performance, AON5802B_101 is widely used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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