Allicdata Part #: | 785-1192-5-ND |
Manufacturer Part#: |
AOT12N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 12A TO-220 |
More Detail: | N-Channel 600V 12A (Tc) 278W (Tc) Through Hole TO-... |
DataSheet: | AOT12N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOT12N60 is a unique electrical component that has found its way into many applications. The component is a field-effect transistor (FET) and is a type of single n-channel MOSFET (metal oxide semiconductor field-effect transistor) that features enhancement mode. It is a part of the AlphaMOS technology family and offers an impressive array of features and performance characteristics, making it a popular choice for many electronic applications.
The AOT12N60 offers a maximum drain-source on-state resistance value of 35mΩ, making it highly efficient and useful in many types of power applications. The maximum drain current value is listed at 12A and the threshold voltage is given as 1.2V at a low gate charge of 15nC. With a package size of only 1.6mm by 2.6mm, it is able to fit into the most compact and energy efficient designs.
When used as a part of an electrical circuit, the AOT12N60 works by allowing current to flow from the source (usually the power supply) through the drain pin. The amount of current that is allowed to flow is determined by the amount of voltage that is applied to the gate pin. When the voltage applied to the gate is zero, no current will flow through the channel. When the voltage is increased, a certain amount of current will be allowed to flow. By increasing the gate voltage further, the amount of current will increase.
The AOT12N60 is such a versatile component that it can be applied in many areas. One such application is as part of a DC-to-DC conversion circuit. By using the transistor in a switchmode power supply design, it is possible to switch between different voltage levels while also regulating the output voltage. This type of setup is common in laptop computer power adapters and other power systems.
The AOT12N60 can also be used in power amplifiers and switching circuits. These components are designed to control the amount of power that is being output, while also regulating the amount of current. This helps to reduce heat dissipation and improve the efficiency of the circuit. Additionally, the MOSFET has a high ESD rating, meaning that it is unlikely to become damaged under typical electric shock conditions.
It is also possible to use the AOT12N60 as part of a logic gate. Logic gates are used to create logic circuits, which are instrumental for programming and controlling digital devices. By using a MOSFET as a switch, the logic gate can be used to change the voltage level from one value to another. This helps to create decision-making circuits, which can be used to control computers or other electronic devices.
The AOT12N60 is such a versatile component that it can be applied in many areas. The features and performance characteristics that make it so popular have made it an essential part of many electronic components and systems. Its ability to control the amount of current and voltage, while also maintaining a high ESD rating, make it a great choice for many applications. The small package size and low gate charge are also advantages, allowing it to be easily integrated into various design architectures.
The specific data is subject to PDF, and the above content is for reference
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