Allicdata Part #: | APT11N80BC3G-ND |
Manufacturer Part#: |
APT11N80BC3G |
Price: | $ 4.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 800V 11A TO-247 |
More Detail: | N-Channel 800V 11A (Tc) 156W (Tc) Through Hole TO-... |
DataSheet: | APT11N80BC3G Datasheet/PDF |
Quantity: | 120 |
1 +: | $ 4.38480 |
30 +: | $ 3.52506 |
120 +: | $ 3.21163 |
510 +: | $ 2.60065 |
1020 +: | $ 2.19332 |
Vgs(th) (Max) @ Id: | 3.9V @ 680µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1585pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 7.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT11N80BC3G is a 800V N-channel Enhancement Mode MOSFET transistor, commonly used in a variety of power applications. It is a single MOSFET transistor which has the capability to operate up to a maximum voltage of 800V, making it suitable for high-voltage applications. The APT11N80BC3G is part of a family of Frequency Changer transistors, which are designed to offer a high level of operational efficiency and performance.
The main application field of these transistors is in power switching applications. They are used in power supplies and in motor controllers, where their relatively low power but high reliability performance makes them ideal. In addition, they are also used in switching regulators in power supply applications, providing efficient and reliable power conversion. They are also well-suited to linear and PWM motor control applications.
The working principle of the APT11N80BC3G transistor is based on an enhancement-mode operation. In this operating mode, the transistor works by allowing the current to flow from drain to source, when the gate-source voltage is increased. The APT11N80BC3G device has an IDSS value of 8A, which is the maximum amount of current that can be allowed to flow through the transistor before it is damaged.
The transistor is constructed with a moulded silicone casing which helps to reduce electro-magnetic interference. The APT11N80BC3G also contains a high drain-source breakdown voltage, as well as a low input capacitance and low gate-source capacitance. The relatively low power dissipation of the device helps to ensure that it runs cool and remains stable even when operating at high frequencies and currents.
The APT11N80BC3G is a popular and reliable power switching device and is widely used in a variety of different applications. Its low power dissipation, high reliability, and low voltage operation make it well-suited for a range of high-voltage applications. It can be used in a variety of power switching, motor control, and power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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