APT40GP90JDQ2

Transistors - IGBTs - Modules

APT40GP90JDQ2 Application Field and Working Principles

IGBTs (Insulated Gate Bipolar Transistors) are voltage-controlled devices that function both like an insulated-gate field-effect transistor (IGFET) and a bipolar junction transistor. They combine the inputs of two types of transistors – junction field effect transistors (JFETs) and bipolar junction transistors (BJTs). This leads to improved performance when compared to traditional bipolar junction transistors (BJTs).

APT40GP90JDQ2 is an IGBT module created by Infineon Technologies and has been designed to provide a high blocking voltage of 1200 V while in fast switching applications. It has a low EMI level, improved current sharing capabilityand is configured with layering technology.

The applications of APT40GP90JDQ2 involve high-power IGBT modules, rectifier bridges, and other power semiconductor devices. This module consists of two IGBT branches that share an identical current. It is a two-level IGBT configuration with a built-in diode situated between each IGBT allowing for fast, reliable switching.

APT40GP90JDQ2 utilizes an insulated-gate bipolar-transistor (IGBT) power device that operates on a two stage process. Firstly, the IGBTs are turned on and its gate is connected to the main power supply. This causes a current path to be created from source to drain that is switched on and off by the control signal from the gate. Secondly, the built-in diode conducts the current flow when the transistor is turned off. This combination of transistors and diodes allows for fast, reliable switching.

The module offers enhanced switching performance due to its high blocking voltage of 1200V. The module is designed to have a low EMI level and is ideal for conducting with high power demands in a variety of applications. Additionally, the layering technology ensures that the IGBTs are evenly distributed and the current sharing capability ensures improved performance.

In conclusion, the APT40GP90JDQ2 IGBT module from Infineon Technologies is an ideal choice for applications like high-power IGBT modules, rectifier bridges, and other power semiconductor devices due to its high blocking voltage, low EMI level, improved current sharing capability, and layering technology. It utilizes an insulated-gate bipolar-transistor power device that allows for fast, reliable switching and offers improved performance for high power demands.