APT85GR120B2 Discrete Semiconductor Products

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An APT85GR120B2 is an IGBT (Insulated Gate Bipolar Transistor) device in a single version. As an IGBT device, it contains an insulated gate with both N-type and P-type semiconductor layers. This allows it to be used in applications where high power control over a wide range of currents is required.

The APT85GR120B2 has two main functions: power conversion and power control. It can be used to convert either AC or DC power, typically from one type to another. For example, it can be used in switch mode power supplies to convert AC mains power to DC power and/or to regulate that DC power. It can also be used as a power switch to control the flow of electricity in a circuit. In both cases, the APT85GR120B2 can be used to increase power efficiency and reduce power losses.

The APT85GR120B2 is able to control a large amount of power due to its wide gate voltage range. In fact, it has a V_CE rating of up to 1200 Volts. This is significantly higher than other types of transistors. The high voltage range, combined with the insulated gate structure and superior switching performance, makes the device ideal for high power applications.

The working principle of the APT85GR120B2 is fairly simple. When voltage is applied to the base of the device, it causes the N-type and P-type semiconductor layers to become conductive. This allows the device to conduct electricity, thus controlling the flow of power. By changing the voltage applied to the base, the amount of power being conducted can be precisely controlled.

The APT85GR120B2 is ideal for any application that requires high power control over a wide range of currents. It is especially suitable for switch mode power supplies where efficient current control is required. The insulated gate structure and wide voltage range also make it suitable for controlling high power applications such as induction heating, motor controllers and power inverters.

In conclusion, the APT85GR120B2 is a versatile and efficient IGBT device in a single version. It has a wide gate voltage range, which makes it well-suited for controlling high power applications. Furthermore, its insulated gate structure and superior switching performance make it ideal for power conversion and control applications. By applying appropriate voltage to the base of the device, its amount of power being conducted can be accurately and precisely controlled.

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