AS4C128M16D2-25BINTR Allicdata Electronics
Allicdata Part #:

AS4C128M16D2-25BINTR-ND

Manufacturer Part#:

AS4C128M16D2-25BINTR

Price: $ 6.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 2G PARALLEL 84FBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 40...
DataSheet: AS4C128M16D2-25BINTR datasheetAS4C128M16D2-25BINTR Datasheet/PDF
Quantity: 1000
2500 +: $ 6.24403
Stock 1000Can Ship Immediately
$ 6.87
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (10.5x13.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SDRAM memory has become increasingly important in electronic systems, and AS4C128M16D2-25BINTR is a type of high-performance SDRAM. It is a quad-rank double-data-rate 4 (QR-DDR4) device and has been developed as part of the Alliant Family of memory products. Its main application fields are automotive and industrial automation.

The AS4C128M16D2-25BINTR is designed to provide higher bandwidth and lower power consumption compared to previous generations of SDRAM devices. It supports an operating frequency of up to 2133MHz, enabling higher than average data transfer rates estimated at 19.2GB/s (bits per second). This memory device also handles up to 8GB of memory, with an internal address load of up to 64K bytes.

The AS4C128M16D2-25BINTR uses a 1-Gbit integrated circuit, which is the smallest and most advanced in the Alliant family, and is offered in both a 4-bit and 8-bit widths. It also includes an on-board error correction code (ECC) that helps to detect and repair data errors.

The unique architecture of the AS4C128M16D2-25BINTR also provides excellent performance while optimizing its operating temperature and power consumption. The device contains two independent 8Mx16 memory banks, each with its own row buffer. This ensures that data can be accessed more quickly and reliably, saving energy and extending the life of the device.

At the heart of the AS4C128M16D2-25BINTR is the DDR4 command flow. This is the set of commands used to initiate and control data transfers between the SDRAM device and the host system. The command flow consists of read, write, and refresh commands, which are executed by the device in order to manage the storage and retrieval of data. The device also supports a variety of commands for error detection and recovery.

The AS4C128M16D2-25BINTR is constructed to operate on 1.2V and 1.35V power supplies, and the power management features of the device help to minimize energy consumption. The device also contains sophisticated thermal management features to ensure proper operation even in extreme temperature conditions. All of these features add up to an improved system performance and extended life.

The AS4C128M16D2-25BINTR is an excellent choice for applications requiring reliable, high-speed memory bandwidth. Its unique architecture and various features help to provide improved performance while minimizing operating power, thus making it ideal for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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