AUIRL7732S2TR Allicdata Electronics
Allicdata Part #:

AUIRL7732S2TR-ND

Manufacturer Part#:

AUIRL7732S2TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 14A DIRECTFET
More Detail: N-Channel 40V 14A (Ta) 2.2W (Ta), 41W (Tc) Surface...
DataSheet: AUIRL7732S2TR datasheetAUIRL7732S2TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Package / Case: DirectFET™ Isometric SC
Supplier Device Package: DIRECTFET™ SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRL7732S2TR is a high-voltage, high-speed, N-channel insulated gate field effect transistor (IGFET) developed by Allegro MicroSystems, LLC. It is designed for use in switch mode power supplies and other power management applications. The device features an exceptionally low total gate charge, low drain-to-source ON resistance and high avalanche energy capability.

Overview of Applications and Working Principle

The AUIRL7732S2TR can be used in applications that require high voltages and high switching speeds, including hard switching converters, high frequency DC/DC switching voltage regulators and AC/DC converters. It provides extremely low total gate charge, low drain-to-source resistance and high avalanche energy capability. In addition, the device is optimized for high-current, high-voltage applications, making it suitable for use in a variety of power management applications.

The working principle of an insulated gate field effect transistor is based on the fact that current flows from source to drain when a voltage is applied from the gate to the source. This creates an electric field at the gate which enhances or reduces the resistance of the drain-source channel. This resistance can be adjusted by either increasing or decreasing the gate voltage. In the AUIRL7732S2TR, the gate voltage is typically 50V DC, and the drain current is rated at 18A.

Features

The AUIRL7732S2TR features an exceptionally low total gate charge of <30nC and a low on-state resistance of 0.022 Ohm. It also features high avalanche energy capability of >20mJ and can operate at up to 75V DC. The device also features fast switching speeds, which are essential for applications that require high frequency switching. In addition, the device is RoHS compliant and halogen-free.

Package

The AUIRL7732S2TR is available in a TO-252-3 package. The package is a surface mounted, hermetically sealed package that is suitable for commercial, automotive and industrial applications. The package includes three terminals, one for the gate and two for source and drain, allowing for easy soldering.

Conclusion

The AUIRL7732S2TR is an insulated gate field effect transistor developed by Allegro MicroSystems, LLC. It is designed for use in a variety of switch-mode power supplies and other power management applications. The device features an exceptionally low total gate charge, low drain-to-source on resistance, and high avalanche energy capability. It is available in a surface-mount TO-252-3 package and is RoHS compliant and halogen-free.

The specific data is subject to PDF, and the above content is for reference

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