BA885E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BA885E6327HTSA1TR-ND

Manufacturer Part#:

BA885E6327HTSA1

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SW 50V 50MA SOT-23
More Detail: RF Diode PIN - Single 50V 50mA SOT-23-3
DataSheet: BA885E6327HTSA1 datasheetBA885E6327HTSA1 Datasheet/PDF
Quantity: 1000
12000 +: $ 0.05819
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 50mA
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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BA885E6327HTSA1 is an RF diode with a wide range of applications. It is a NPN Junction Transistor with a total power dissipation rate of up to 15 watts. It is a high frequency diode capable of operating at frequencies up to 3GHz. This diode is designed for use in high frequency circuits, such as radios, audio amplifiers and other related applications.This diode consists of a primary and a secondary section. The primary section consists of three elements: the emitter, the base, and the collector. The emitter is a metal layer that emits the electrical signals to the base. The base is a refractory material that controls the flow of electrons from the emitter to the collector. The collector is a terminal to which the output signal is generated.The BA885E6327HTSA1 is a unidirectional diode. This means that it only allows electrons to flow from the emitter to the collector and not in the opposite direction. This feature is useful in circuits such as radio frequency amplifiers and other radio frequency applications.The working principle of this diode is based on the movement of electrons or “holes” in the semiconductor material. When the emitter is connected to the base, the “holes” start to move towards the collector. This movement of “holes” generates an electric current, which is then amplified and output at the collector.One of the many advantages of this diode is that it provides high gain and high frequency performance, making it an ideal choice for multiple applications. This diode is commonly used in audio amplifiers, radio receivers, and other related equipment. It is also used in the transport of data and signals for radio and television transmissions, as well as for cellular communication systems.The BA885E6327HTSA1 is capable of handling a wide range of current ratings, making it suitable for various circuit designs. It is also very efficient in conserving energy, helping to reduce the overall power consumption of the circuit.In summary, the BA885E6327HTSA1 is a unidirectional RF diode with a wide range of applications. It has the ability to operate at high frequencies, is capable of handling various current ratings, and is energy efficient. This makes it an ideal choice for audio amplifiers, radio receivers, and other related circuits.

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