| Allicdata Part #: | BAS16XV2T1GOSTR-ND |
| Manufacturer Part#: |
BAS16XV2T1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE GEN PURP 75V 200MA SOD523 |
| More Detail: | Diode Standard 75V 200mA (DC) Surface Mount SOD-52... |
| DataSheet: |  BAS16XV2T1G Datasheet/PDF |
| Quantity: | 129000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 75V |
| Current - Average Rectified (Io): | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
| Speed: | Small Signal = |
| Reverse Recovery Time (trr): | 6ns |
| Current - Reverse Leakage @ Vr: | 1µA @ 75V |
| Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-79, SOD-523 |
| Supplier Device Package: | SOD-523 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | BAS16XV2 |
Description
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The BAS16XV2T1G is a single diode specifically designed for usage in small signal, low power applications. It is composed of a PN junction and a P-channel MOSFET, providing low forward voltage drop while offering the benefit of a Schottky diode. The device is available in a SOT-23 (SC-88) surface-mount package.The main application field for the BAS16XV2T1G is in low power applications, such as audio amplifiers, voltage regulation, switching supply and voltage multiplier circuits, high frequency circuit protection and cross conduction prevention.In order to understand the working principle of the BAS16XV2T1G, it is helpful to understand how a diode works. A diode consists of a P-type and an N-type semiconductor that are joined together. When a voltage is applied across the terminals of a diode, the electric field that is established pulls carriers to the junction. This creates an area of high conductivity between the junction points, allowing current to flow.When current is flowing through a diode, it is called forward biased. In this state, the diode acts as an open switch, enabling current to flow. When the current reverses direction, the diode is said to be reverse biased and its effective resistance becomes very high, preventing current flow.With the BAS16XV2T1G, the P-channel MOSFET paired with the PN junction provides a low forward voltage drop. When a voltage is applied in the forward bias, the MOSFET is switched on while the diode conducts. As a result the voltage drop across the diode is further reduced. This effect allows the BAS16XV2T1G to be used in low power applications, where a regular diode may not be suitable.In summary, the BAS16XV2T1G is a single diode specifically designed for low power applications. It consists of a PN junction and a P-channel MOSFET, allowing for minimal voltage drop while still providing the benefit of a Schottky diode. This makes it ideal for use in voltage regulation, switching supplies, and other low power applications.
The specific data is subject to PDF, and the above content is for reference
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