BAS2103WE6433HTMA1

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The BAS2103WE6433HTMA1 is a single rectifier diode from the BAS21x series from ROHM Semiconductor. It is a planar type Schottky barrier diode, which has a reverse characteristic in which the current flows in the opposite direction when voltage is applied to the diode in the reverse direction.

The BAS2103WE6433HTMA1 has a peak reverse current of 4.3 A, with forward voltage drop of 0.7V, in the reverse direction, and a junction temperature of 125°C. It also has a series resistance of 0.033 ohm and capacitance of 1.8 pF. The cutoff frequency is 30GHz.

The BAS2103WE6433HTMA1 can be used in various applications such as DC/DC converters, switching regulators, DC/AC inverters and phase control circuits. It is especially suitable for high power switching applications. The diode can be used in applications such as voltage doubling, boost converters and buck converters, as well as in synchronous rectification switching.

The BAS2103WE6433HTMA1 is a Schottky barrier diode which works on the principle of minority carrier injection. When a negative voltage is applied to the diode, the electrons in the n-region and the holes in the p-region of the diode, are drawn towards the anode and the cathode of the diode, respectively. The electric field reaches a saturation level, when the forward voltage is above the barrier voltage, which is the potential barrier between the n-region and the p-region of the diode and allows the current to flow across the junction. The electric field works as a tunnel and enables the flow of electrons from the n-region to the p-region of the diode. This flow of electrons is called minority carrier injection.

In summary, the BAS2103WE6433HTMA1 is a single rectifier diode from the BAS21x series from ROHM Semiconductor. It has a reverse current of 4.3 A and peak forward voltage drop of 0.7V. It can be used in various applications such as DC/DC converters and switching regulators. The working principle of the diode is based on the principle of minority carrier injection and works by enabling electrons flow from the n-region to the p-region of the diode.

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