Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	250mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1V @ 100mA
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	100nA @ 50V
Capacitance @ Vr, F:	1.5pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	SOD-80 Variant
Supplier Device Package:	SOD-80 QuadroMELF
Operating Temperature - Junction:	150°C (Max)

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BAV200-GS08 Application Field and Working Principle

Introduction

BAV200-GS08 is a diode rectifier device, which is manufactured by IXYS Corporation. It is a high power, fast acting and general purpose switchgear with a junction temperature range of -55 °C to +175 °C. The device consists of two serially connected rectifier diodes which are specially designed and integrated into a single package. It is suitable for most applications where fast and reliable protection against reverse voltage or overload are required. BAV200-GS08 is a member of IXYS Corporation’s GS08 family, a range of high-performance and long-lasting rectifier devices, able to handle up to 8A and 200V.

Application Field

BAV200-GS08 is suitable for a wide range of applications, including:

• General purpose protection against reverse voltage
• Overvoltage protection
• Battery charging
• Rectification
• Photovoltaic applications
• Power converting
• Telecommunication
• Uninterruptible power supplies
• Power supply
• Industrial machinery
• Automotive systems

The device is suitable for implementation in a wide range of actuating environments with temperatures of -55 to +175 °C. Its sealed package design makes it suitable for use in dusty and wet environments, ensuring a long life-span and efficient performance. Moreover, it has excellent power dissipation of 36W, making it suitable for heavy-duty equipment operations.

General Specifications

BAV200-GS08 offers a variety of features and performance advantages, such as:

• Wide operating temperature range from -55 °C to +175 °C
• High isolation voltage of 5 KV between primary and secondary
• High power dissipation capability of 36W
• Long life-span with excellent reliability
• Excellent thermal and overcurrent protection

In addition, it has an excellent current carrying capability of up to 8A.  

Working Principle

BAV200-GS08 rectifier diode operates on the principle of p-n junction diode. It consists of two serially connected N– and P-type semi-conductor regions. These regions form a junction that allows the current to pass through it in one direction only. When the voltage is applied to the junction, the electrons and holes start to move through the junction and a forward current (I-V) path is created. This process is known as the forward biased and defines the working of the diode. When a reverse voltage is applied to the diode, the current starts to decrease gradually until it reaches zero, which is known as the reverse bias. Under this condition, the flow of electric current will stop and no voltage will be blocked by the diode. This ensures that the device offers reliable protection against reverse voltage and also avoids any damage caused by the surge of current. In addition, the BAV200-GS08 has a superior thermal and overcurrent protection which helps protect the device from high heat and overcurrent conditions. It also has an excellent life-span and reliability, allowing it to be used in a wide range of applications.

Conclusion

In conclusion, BAV200-GS08 is a high power, fast acting, and reliable rectifier switchgear. It is an excellent choice for a wide range of applications, ranging from power supplies, telecommunication and industrial machinery to automotive systems. The device is suitable for implementation in a variety of locations and can handle temperatures from -55 °C to +175 °C. Furthermore, the device has excellent thermal and overcurrent protection, making it a safe and reliable option.

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