BC 850BF E6327 Allicdata Electronics
Allicdata Part #:

BC850BFE6327-ND

Manufacturer Part#:

BC 850BF E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 45V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 250MHz 250m...
DataSheet: BC 850BF E6327 datasheetBC 850BF E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BC850
Description

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BC 850BF E6327 transistors are a type of bipolar junction transistors (BJT) and a specific class of single transistors. They are components of integrated circuits that are widely used in various electronic applications. This article will discuss their application fields and working principle.

Application Fields

BC 850BF E6327 transistors are widely used due to their small size and high speed capabilities. They are used to amplify signals and control current flow in many different applications. Low-noise audio amplifiers, computer logic circuits, motor control, voltage regulators, power supplies, and many other applications utilize these transistors.

Another application for BC 850BF E6327 transistors is in the radio frequency (RF) amplification stage of telecommunication systems. These transistors allow RF signals to be amplified to make them more powerful and more easily transmitted over long distances. They also provide higher gain, wider bandwidths, and better linearity than many other types of transistors.

BC 850BF E6327 transistors are also used in optoelectronic devices, such as lasers and LED displays. Their fast switching capability and low noise level make them ideal for these applications.

Working Principle

BC 850BF E6327 transistors are NPN transistors that use the diffusion of minority carriers across a P-N junction to control current flow. A P-N junction is formed when a positively-doped semiconductor is combined with a negatively-doped semiconductor. When a positive voltage is applied to the base of a transistor, electrons start to diffuse across the junction, creating a small current. This current is then amplified by a gain factor of the transistor, allowing it to control larger currents.

BC 850BF E6327 transistors have a range of characteristic parameters that define their application field. These include their transition frequency, maximum transition frequency, and collector-base capacitance. The transition frequency is the frequency at which a transistor switches between conductive and non-conductive states, while the maximum transition frequency is the highest frequency a transistor can switch at. The collector-base capacitance is the amount of charge that can be stored in the collector-base junction, which affects the speed and power of the transistor.

Conclusion

BC 850BF E6327 transistors are a type of single bipolar junction transistors used in many different applications. Their small size and fast switching capabilities make them ideal for use in audio amplifiers, logic circuits, power supplies, RF amplifiers, and optoelectronic devices. Their working principle involves the diffusion of minority carriers across a P-N junction, and their characteristic parameters are used to determine their performance in various applications.

The specific data is subject to PDF, and the above content is for reference

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