BCX51-10,115 Allicdata Electronics
Allicdata Part #:

1727-4908-2-ND

Manufacturer Part#:

BCX51-10,115

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 45V 1A SOT89
More Detail: Bipolar (BJT) Transistor PNP 45V 1A 145MHz 1.3W Su...
DataSheet: BCX51-10,115 datasheetBCX51-10,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.06615
2000 +: $ 0.05954
5000 +: $ 0.05623
10000 +: $ 0.05127
25000 +: $ 0.04796
50000 +: $ 0.04410
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.3W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BCX51
Description

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BCX51-10,115 application field and working principle

The BCX51-10,115 is a PNP and NPN Small-Signal Transistor designed for general purpose switching and amplifiers. It is made of an advanced BiCMOS process with high current gain, wide bandwidth, and improved input/output isolation. This transistor is especially suited to applications requiring high speed operation with low bias current. The BCX51-10,115 is available in 3-pin TO-d and SOT-23 packages.

Applications

The BCX51-10,115 transistor is used in a variety of applications, including but not limited to:

  • High voltage inverters
  • Motor control systems
  • Power management systems
  • Mobile phones, portable radios, wireless networking products
  • Thermocouples
  • Electronic lamps, fluorescent lamps, and power outlets

Working Principle

The BCX51-10,115 is a bipolar junction transistor (BJT) composed of a single crystal silicon material with a layer of N-type doped semiconductor (N+) and a layer of P-type doped semiconductor (P+). This material is commonly known as a P-N junction. When a voltage is applied to the transistor, it allows a current to flow through it. The current flow is modulated by the base-emitter junction of the BJT.

The input current to the base is called the "control current" and the current at the collector is called the "collector current". The voltage between the emitter and base is called the "emitter-base voltage", and the voltage between the collector and the base is called the "collector-base voltage". The ratio between the control current and the collector current will determine the gain of the transistor.

The operation of the BCX51-10,115 transistor is based on the principle of current flow from the emitter to the collector. When current is supplied to the base, it acts like a switch, allowing current to flow between the emitter and collector. This current flow is dependent on the base-emitter voltage, which is modulated by the current flow through the base. The collector current is then dependent on the current flowing through the base and the current gain of the transistor.

Conclusion

The BCX51-10,115 transistor is a PNP and NPN Small-signal Transistor designed for general purpose switching and amplifiers. It is a versatile component, capable of operating at high speed and low bias currents, and is therefore ideal for a variety of applications. The working principle of the BCX51-10,115 is based on the principles of current flow from the emitter to the collector, and the base-emitter voltage, which modulates the current flow through the base.

The specific data is subject to PDF, and the above content is for reference

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