BCX71HE6327HTSA1 Allicdata Electronics
Allicdata Part #:

BCX71HE6327HTSA1TR-ND

Manufacturer Part#:

BCX71HE6327HTSA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 45V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 250MHz 330m...
DataSheet: BCX71HE6327HTSA1 datasheetBCX71HE6327HTSA1 Datasheet/PDF
Quantity: 1000
45000 +: $ 0.01762
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCX71
Description

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BCX71HE6327HTSA1 is classified as a Transistors - Bipolar (BJT) - Single. This type of transistor is designed to apply to a wide variety of applications, and be used to control the current and voltage of an electrical circuit. It has the ability to amplify and switch electrical signals, providing the capability to terminate, switch, and regulate the flow of electricity.

The structure of BCX71HE6327HTSA1 consists of three layers. The first layer is the base, as its name indicates, which is the point between the emitter and the collector. The second layer is the collector, which is the outermost layer. Finally, the third layer is the emitter, which is the layer that is opposite the collector. All layers of this transistor are separated by a thin insulator. By varying the composition of the collector, emitter, and base, they can be tailored to meet the requirements of the circuit that they are to be used in.

BCX71HE6327HTSA1 has a wide range of application fields. It is extensively used in the communication and information technology (IT) sector. It is heavily used in radio communications and other telecommunications systems, and it is also applied to amplifier circuits, logic circuits, and power supply switching devices.

The working principle of BCX71HE6327HTSA1 is based on the PN junction. The PN junction is composed of two electrodes, the anode (or P-type material) and the cathode (or N-type material). By providing bias to the junctions, a current can be induced between the two electrodes. The bias is provided by the positive and negative charge carriers that form the transistor’s collector, base and emitter. By controlling the current flow between them, the transistor will be able to either amplify or switch its output signals.

For amplifying applications, BCX71HE6327HTSA1 can be connected in an emitter-coupled configuration where the collector and the emitter are connected in series. In this configuration, the emitter-base junction produces a signal that is amplified by the current between the collector and the emitter. In the switching application, the base-emitter junction of the transistor will be used to control the collector current. When a voltage is applied to the base, the collector current will decrease so that either an on/off switching or a variable current flow can be achieved.

In conclusion, the BCX71HE6327HTSA1 transistor is a widely used component in many electrical applications. Its working principle is based on the PN junction and its structure consists of three layers that are separated with an insulator. By manipulating the sizes and distributions of the components, it can be tailored to meet specific application needs. This makes it suitable for a wide range of fields such as communication, IT, and power supply switching.

The specific data is subject to PDF, and the above content is for reference

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