BD239ATU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BD239ATU is a bipolar junction transistor (BJT) device that has a single-bipolar configuration. It is a power transistor made from silicon and is capable of withstanding higher voltages and higher power consumption than other transistors. It is commonly used in industrial and consumer applications for power amplification and switching.

The BD239ATU has an insulation voltage of 3KV, a collector-base breakdown voltage of 65V and a maximum collector-emitter voltage of 40V. It has an integrated overload protection feature which is essential for any device that carries high-current or high-voltage signals. Its power dissipation capacity is 24W and it should not be operated at more than 6A collector current.

The BD239ATU is primarily used in applications where high peak currents and high voltage need to be switched or amplified. It can be used to regulate current in lighting and motor control circuits, and is also used in power supplies and audio amplifiers. Its low on-state voltage drop, low gate charge and low gate gradient are advantages in the switch mode power supply (SMPS) circuits when used as a primary switch.

The BD239ATU works on the principle of using the forward bias current to trigger the device. When the voltage is applied to the device, current starts flowing from the collector to the emitter. This current is called the collector current. The magnitude of this current is determined by the voltage applied across the collector and the emitter.

The base of the device acts like a gate and restricts the amount of current flowing from the collector to the emitter. The amount of restriction is dependent on the voltage applied on the base. If the voltage on the base is low then the current is restricted more and less current will flow from the collector to the emitter. If the voltage on the base is high then it will be less restricted and greater currents can flow between the collector and emitter.

The BD239ATU also has internal protection circuitry built in, to prevent the collector current from exceeding its maximum limit of 6A. This protection circuit will shut off the current to protect the device from any damage that may occur due to over-current. The protection circuit is also very helpful in switching applications where the device needs to switch rapidly from one state to another.

In summary, the BD239ATU is a single-bipolar silicon power transistor that can handle high voltages and current levels in applications such as motor control circuits, power supplies, audio amplifiers and primary switch mode power supplies. Its high voltage and current ratings and the internal protection circuit make it an ideal choice for these applications. Its low on-state voltage drop and low gate charge and low gate gradient also make it very useful in regulating current.

The specific data is subject to PDF, and the above content is for reference