BDW83C-S

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The BDW83C-S is a high-performance, high-gain power transistor suitable for high-current applications in the audio and power output stages of consumer circuits. It is capable of a continuous collector current of up to 30A, and can operate efficiently at voltages up to 80V. The low collector-to-emitter capacitance of the BDW83C-S helps reduce the crossover distortion associated with direct coupled audio applications and produces high-performance linearity. The device is also well suited for high-efficiency power output stages.

As a single bipolar junction transistor (BJT), the BDW83C-S is commonly used in class-B power amplifiers, radio-frequency (RF) amplifiers, switching circuits, regulated power supplies, and general purpose high-current applications. It is designed to provide exceptional linearity and power handling, while offering improved reliability due to its robust construction. Additionally, the device features an enhanced maximum safe operating area (MSOA) and a high breakdown voltage that ensure reliable operation even when subjected to large transient voltage spikes.

The BDW83C-S transistor is a NPN type with a Base-Emitter voltage of 80V, an ICmax of 30A, a hFE of 500, a P2 max of 80W, and a maximum collector-to-emitter voltage of 80V. Its maximum collector-to-base voltage is 150V, and its transition frequency Ft of 100MHz ensures excellent performance in high-frequency applications.

When constructing a circuit using the BDW83C-S, it is important to ensure the device is properly heatsinked and operated within the specified ratings. For example, the device has a maximum power dissipation of 80W at an ambient temperature of 25°C. At elevated ambient temperatures, it is important to reduce the power dissipation or increase the heatsinking in order to ensure safe operation.

The BDW83C-S is capable of producing high-efficiency linearity and power handling across a wide range of frequencies and is thus well suited for audio, RF and power output applications. It is capable of providing high-current performance and is designed for operation up to 80V and with currents up to 30A. Its low collector-to-emitter capacitance helps reduce the crossover distortion associated with direct coupled audio applications and, when combined with its high breakdown voltage, makes the device well-suited for high-efficiency power output stages.

The BDW83C-S is a single bipolar junction transistor (BJT) designed for applications such as class-B power amplifiers, radios, switching circuits, regulated power supplies, and general-purpose high-current applications. It features an impressive maximum collector-to-emitter voltage of 80V, an ICmax of 30A and a low collector-to-emitter capacitance. In addition, it is designed to provide exceptional linearity, improved reliability, and a high breakdown voltage that allows the device to handle large transient voltage spikes.

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