Allicdata Part #: | BF422GOS-ND |
Manufacturer Part#: |
BF422G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 250V 0.05A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 250V 50mA 60MHz 830mW... |
DataSheet: | BF422G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 25mA, 20V |
Power - Max: | 830mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF422 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BF422G is a high-frequency single planar PNP bipolar transistor which is ideal for use in low power and switching applications.
The construction of the BF422G consists of an alloyed silicon PNP epitaxial-base structure in a rugged P-N-P planar arrangement. It has a double-diffused mesa collector structure to enhance power gain, stability, and current-handling capability. This planar arrangement provides reliable performance, making the BF422G suitable for various telecommunications and computer applications.
The semiconductor package of the BF422G consists of both clip-bonded and tape-bonded methods of assembly. Its packages are designed to provide optimum thermal dissipation. This dual-clip-bonded method allows the user to assemble two pieces of silicon, one package on each side of the transistor where it is held firmly in place by the use of two clips. In addition, the clip-bonded packages provide better electrical shielding and a tighter connection between the silicon and the terminals of the device.
The BF422G is operated at a frequency range of 10 MHz to 100 MHz. Its maximum power dissipation is 2W at 25°C. Its collector-to-base breakdown voltage is 30V. Its collector-to-emitter voltage is 30 V. Its on-state electrolytic capacitance is 500 pF. The current gain of the device is 30 at 10 mA, and its collector-to-emitter saturation voltage is 0.5V.
The working principle of theBF422G can be described as follows. When an electric signal is applied to the base terminal, it is amplified and then applied to the emitter terminal, resulting in a high-gain voltage output at the collector terminal. The signal at the collector terminal is then passed along to the rest of the circuit. The signal is further amplified by the addition of a transistor amplifier. This amplifier increases the signal, allowing the voltage and current levels to be controlled by the user. This makes the BF422G suitable for various electronic applications, such as RF amplifiers, mixers, multiplexers and demultiplexers, and oscillators.
The BF422G provides a secure and reliable performance in a variety of telecommunications and computer applications. Its efficient and easy-to-assemble package design makes it a suitable and reliable choice for various applications. It features high voltage and current gains, low noise and power levels, and low on-state capacitance for low power and switching applications. Media players, cellular phones, and other devices with low-power requirements for their applications make the BF422G a perfect fit for these applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BF4220-20B | JKL Componen... | 0.0 $ | 1000 | LAMP FLOOR 4.1MM DIA 220M... |
BF4275-20B | JKL Componen... | 6.03 $ | 1000 | LAMP CCFL 4.85 X 275MM 61... |
BF420,112 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 300V 0.05A SOT5... |
BF420,116 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 300V 0.05A SOT5... |
BF421,112 | NXP USA Inc | 0.0 $ | 1000 | TRANS PNP 300V 0.05A SOT5... |
BF422,116 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 250V 0.05A SOT5... |
BF423,112 | NXP USA Inc | 0.0 $ | 1000 | TRANS PNP 250V 0.05A SOT5... |
BF423,116 | NXP USA Inc | 0.0 $ | 1000 | TRANS PNP 250V 0.05A SOT5... |
BF421-AP | STMicroelect... | 0.0 $ | 1000 | TRANS PNP 300V 0.5A TO-92... |
BF420ZL1G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 300V 0.05A TO-9... |
BF421ZL1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 300V 0.05A TO-9... |
BF421ZL1G | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 300V 0.05A TO-9... |
BF422 | ON Semicondu... | -- | 1000 | TRANS NPN 250V 0.05A TO-9... |
BF422G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 250V 0.05A TO-9... |
BF422RL1G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 250V 0.05A TO-9... |
BF422ZL1 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 250V 0.05A TO-9... |
BF422ZL1G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 250V 0.05A TO-9... |
BF423G | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 250V 0.05A TO-9... |
BF423ZL1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 250V 0.5A TO-92... |
BF423 | ON Semicondu... | -- | 1000 | TRANS PNP 250V 0.05A TO-9... |
BF423ZL1G | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 250V 0.5A TO-92... |
BF420-AP | STMicroelect... | 0.0 $ | 1000 | TRANS NPN 300V 0.5A TO-92... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...