BF422G Allicdata Electronics
Allicdata Part #:

BF422GOS-ND

Manufacturer Part#:

BF422G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 250V 0.05A TO-92
More Detail: Bipolar (BJT) Transistor NPN 250V 50mA 60MHz 830mW...
DataSheet: BF422G datasheetBF422G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 830mW
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BF422
Description

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The BF422G is a high-frequency single planar PNP bipolar transistor which is ideal for use in low power and switching applications.

The construction of the BF422G consists of an alloyed silicon PNP epitaxial-base structure in a rugged P-N-P planar arrangement. It has a double-diffused mesa collector structure to enhance power gain, stability, and current-handling capability. This planar arrangement provides reliable performance, making the BF422G suitable for various telecommunications and computer applications.

The semiconductor package of the BF422G consists of both clip-bonded and tape-bonded methods of assembly. Its packages are designed to provide optimum thermal dissipation. This dual-clip-bonded method allows the user to assemble two pieces of silicon, one package on each side of the transistor where it is held firmly in place by the use of two clips. In addition, the clip-bonded packages provide better electrical shielding and a tighter connection between the silicon and the terminals of the device.

The BF422G is operated at a frequency range of 10 MHz to 100 MHz. Its maximum power dissipation is 2W at 25°C. Its collector-to-base breakdown voltage is 30V. Its collector-to-emitter voltage is 30 V. Its on-state electrolytic capacitance is 500 pF. The current gain of the device is 30 at 10 mA, and its collector-to-emitter saturation voltage is 0.5V.

The working principle of theBF422G can be described as follows. When an electric signal is applied to the base terminal, it is amplified and then applied to the emitter terminal, resulting in a high-gain voltage output at the collector terminal. The signal at the collector terminal is then passed along to the rest of the circuit. The signal is further amplified by the addition of a transistor amplifier. This amplifier increases the signal, allowing the voltage and current levels to be controlled by the user. This makes the BF422G suitable for various electronic applications, such as RF amplifiers, mixers, multiplexers and demultiplexers, and oscillators.

The BF422G provides a secure and reliable performance in a variety of telecommunications and computer applications. Its efficient and easy-to-assemble package design makes it a suitable and reliable choice for various applications. It features high voltage and current gains, low noise and power levels, and low on-state capacitance for low power and switching applications. Media players, cellular phones, and other devices with low-power requirements for their applications make the BF422G a perfect fit for these applications.

The specific data is subject to PDF, and the above content is for reference

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