BFP842ESDH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BFP842ESDH6327XTSA1TR-ND

Manufacturer Part#:

BFP842ESDH6327XTSA1

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC TRANSISTOR RF NPN SOT343
More Detail: RF Transistor NPN 3.7V 40mA 60GHz 120mW Surface Mo...
DataSheet: BFP842ESDH6327XTSA1 datasheetBFP842ESDH6327XTSA1 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.10341
6000 +: $ 0.09674
15000 +: $ 0.09007
30000 +: $ 0.08540
75000 +: $ 0.08340
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.7V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Gain: 26dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Base Part Number: BFP842
Description

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BFP842ESDH6327XTSA1 is a kind of transistor categorized as bipolar junction transistor (BJT), used in radio frequency (RF) applications. It is mainly made up of emitter, base and collector terminals. As a common active component, it uses a small current to control a large current, which ultimately achieves the purpose of amplification. Due to its direct current amplification feature, this type of transistor can be used as a switch in some specific usages.

BFP842ESDH6327XTSA1 is a form of common-base amplifier with a high input impedance, but low output impedance. Its main working principle is based on the current amplification principle. When using this type of transistor its base must be driven by a strong current. When current enters through its emitter, a small quantity of electrons will pass through it. Then, the current gets a little development. After that, the amplified current goes through its collector terminal, achieving the purpose of amplification.

This type of transistor is usually used as an amplifier in amplifying electronic signals in radio frequency. Also, due to its features such as high gain, small size, and low voltage operation, it is widely used in amplifying audio signals, or as part of a mixer in the radio frequency communication field. Another great feature of this transistor is its low noise. This makes it a great choice for low noise amplifier applications.

BFP842ESDH6327XTSA1 can also be used as a switch. In this usage, it acts like a field-effect transistor to turn on or off circuit connections of a certain device. This way tends to be used as a switching control for some devices, including power amplifiers, oscillators, mixers, and also some linear and nonlinear amplifiers.

As a conclusion, BFP842ESDH6327XTSA1 belongs to the category of transistors – bipolar (BJT) – RF, and its main application field is in the RF communication field, as well as in some audio applications. The working principle of this type of transistor is mainly based on the current amplification principle, which can be used as an amplifier or a switch in various specific usages.

The specific data is subject to PDF, and the above content is for reference

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