Allicdata Part #: | 1603-1112-ND |
Manufacturer Part#: |
BLA8H0910L-500U |
Price: | $ 334.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET LDMOS 50V SOT502A |
More Detail: | RF Mosfet LDMOS 50V 90mA 900MHz ~ 930MHz 19dB 500W... |
DataSheet: | BLA8H0910L-500U Datasheet/PDF |
Quantity: | 20 |
1 +: | $ 304.05700 |
10 +: | $ 294.91200 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 900MHz ~ 930MHz |
Gain: | 19dB |
Voltage - Test: | 50V |
Current Rating: | 2.8µA |
Noise Figure: | -- |
Current - Test: | 90mA |
Power - Output: | 500W |
Voltage - Rated: | 114.5V |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
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BLA8H0910L-500U is a type of N-channel common-source, depletion-mode, advanced high-performance GaAs MESFETs (Metal-Semiconductor Field-Effect Transistor). It is a pioneer of advanced high-performance GaAs MESFETs in RF applications. Depending on its application field, it can be used to increase or decrease the power of RF signals.
The working principle of BLA8H0910L-500U is based on the concept of field effect. In this principle, a voltage (Vgs) is applied across the gate and source terminals of the transistor to control the current flow through the device. This is done by creating a electric field between the gate and the channel. When voltage is applied to the gate it creates an accumulation region between the channel and the gate known as inversion layer. The current is carried by mobile electrons and holes in this inversion layer. This current is modulated by the voltage applied to the inversion layer that increases of decrease the electric field.
The most important feature of this device is its low insertion loss and high power gain capability. With proper design it can be used to create efficient amplifiers with gain of up to 20 dB. It can be used as a driver amplifier to increase the signal power of RF systems.
This device is well-suited for broadcast systems, military and aerospace applications and also for satellite communications and jamming applications. It can also be used for short-haul and long-haul communication links. Some of the additional applications include receivers, transmitters, communication systems, radars, surveillance systems and point-to-point systems.
BLA8H0910L-500U is a reliable, efficient and cost-effective RF device for amplifying high power RF signals. It is the perfect choice for various RF applications which require low insertion loss and high power gain with wideband capability. The device is reliable and will provide good performance with minimum power consumption.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLA8H0910L-500U | Ampleon USA ... | 334.46 $ | 20 | RF MOSFET LDMOS 50V SOT50... |
BLA8H0910LS-500U | Ampleon USA ... | 334.46 $ | 20 | RF MOSFET LDMOS 50V SOT50... |
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