BLA8H0910LS-500U

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RF transistors are electronic components that are responsible for switching, controlling, and amplifying electronic signals. The BLA8H0910LS-500U is an integrated high-frequency, high-power radio frequency (RF) transistor belonging to this class of electronics. This particular device has a wide range of applications.

Typical applications of the BLA8H0910LS-500U include emitting, transmitting, and receiving radio signals in wireless communications systems. It is optimized for use in 1090MHz band commercial aviation transponders, allowing for the transmission and reception of signals for surveillance and navigation. In addition to commercial aviation, this device is suitable for use in marine navigation, avionics, L- and S-band GSM cellular base-station applications, satellite communications, land-mobile radio, medical imaging, and automotive radar systems.

The BLA8H0910LS-500U is built with a single N-Channel, laterally-diffused metal-oxide-semiconductor field-effect-transistor (LDMOSFET) configuration, making it suitable for use as a high-efficiency output transistor in power amplifiers. The single gate transistor is internally biased and requires a gate voltage of 2.75V. It has a threshold gate control of 3V, with a gate-source minimum On-voltage of -3.6V.

The LDMOSFET transistor design allows the BLA8H0910LS-500U to provide superior gain and power efficiency while minimizing size and cost. Its high-efficiency operation, driven by a continuously varying drain voltage, makes it suitable for a variety of high-frequency and high-power applications.

The BLA8H0910LS-500U has a maximum output power of 500W and a maximum gain of 17.7 dB, with a P1dB compression point of 51.4 dBm. Its drain bias allows for positive switching and single-phase operation up to and beyond AM/FM frequencies. The BLA8H0910LS-500U also features a thermal pad and is housed in an 11.07mm x 6.13mm SO16 package. Its power dissipation rating is 2W, with a junction temperature range of -40°C to +85°C.

The BLA8H0910LS-500U is ideal for applications requiring high frequency and power capabilities such as those found in commercial aviation, cellular base-stations, land mobile radio, and medical imaging, as well as a wide range of other applications. Its LDMOSFET configuration provides a robust and power-efficient solution for emerging and existing high-frequency, high-power RF communications applications.

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