BLP7G22-10Z Discrete Semiconductor Products |
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Allicdata Part #: | 568-12532-2-ND |
Manufacturer Part#: |
BLP7G22-10Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 16DB 12VDFN |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 110mA 2.... |
DataSheet: | BLP7G22-10Z Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 2.14GHz |
Gain: | 16dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 110mA |
Power - Output: | 2W |
Voltage - Rated: | 65V |
Package / Case: | 12-VDFN Exposed Pad |
Supplier Device Package: | 12-HVSON (6x4) |
Base Part Number: | BLP7G22 |
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BLP7G22-10Z transistor is a high-performance GaN power transistor with a maximum drain source voltage of 175V and technology adopting RF band. It is mainly used for servo motor control, air conditioner and energy-saving motor drive, power switching, and also is widely used in telecom applications. The key features of GaN power transistor include high frequency, wide power bandwidth, high power density and high efficiency.
BLP7G22-10Z belongs to a MOSFET power transistor, which can support up to 800W peak power and up to 3GHz RF frequency. This MOSFET power transistor has a high gain linearity power, small noise, high linearity, and high efficiency. It has a very low drain to source leakage current and offers low on-resistance (RDson) of 17 mOhms. The total harmonic distortion of the BLP7G22-10Z is less than 0.05%. Furthermore, the transistor has the ability to manage peak power effectively, allowing the device to function reliably in harsh conditions.
BLP7G22-10Z has the following applications:
- High-frequency servo motor control
- High-frequency air conditioner control
- High-frequency energy-saving motor drive
- High-frequency power switching applications
- Telecom applications
As this MOSFET transistor is optimized for RF frequencies, it is often used in designs that require high power output at a wide frequency range. For example, the transistor is used in telecom and broadband designs such as base station systems, Ethernet, WiFi and mobile communications. BLP7G22-10Z can also be used in other RF applications that require high efficiency, output power, wide frequency range, and low noise levels, such as interactive components, satellite communication systems, and active antenna systems.
These MOSFETs are manufactured using semiconductor processes and are not easily affected by external temperatures. They have far-infrared welding properties, which make them robust and durable in all weather conditions. As they are designed to be highly resistant to radiation and other disruptive forces, they can be used in a variety of harsh environments.
BLP7G22-10Z MOSFETs use a standard grid structure, with a mobile field effect transistor array. The gate is connected to the main electrode and is used to control the flow of electrons and holes through the device. The potential barrier formed across the electrodes determines the operating voltage of the device. This type of design and technology enables BLP7G22-10Z to have very low on-resistance and excellent gain linearity.
BLP7G22-10Z MOSFET is a very common transistor in the industry due to its high performance and low power loss design. With its low noise levels, high frequency capabilities and excellent linearity, this device is ideal for use in many different applications. It is also highly resistant to radiation, making it suitable for use in many harsh environments.
The specific data is subject to PDF, and the above content is for reference
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