BLP8G10S-45PJ

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	952.5MHz ~ 957.5MHz
Gain:	20.8dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	224mA
Power - Output:	2.5W
Voltage - Rated:	65V
Package / Case:	SOT-1223-1
Supplier Device Package:	4-HSOPF
Base Part Number:	BLP8G10

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BLP8G10S-45PJ is a Field Effect Transistor (FET) widely used in radio frequency (RF) applications. It is a low power, high frequency N-Channel enhancement type MOSFET. The transistor consists of three terminals — Source, Drain, and Gate. It is commonly used in power amplifiers and switching circuits for it\'s capability to handle high frequency signals with a very small signal current (gate current).The source terminal of a FET is connected to the negative side of the power supply, the drain is connected to the positive side, and the gate is connected to the input signal. A positive gate drive voltage is applied to the gate to allow current to flow through the FET. The current passing through a FET is controlled by the voltage applied to the gate. When the drain current starts to become too high, the gate voltage is reduced, blocking the current and preventing it from passing through. The BLP8G10S-45PJ FET is ideal for use in RF power amplifiers and switching circuits due to its high speed operation and its low off-state current. The low off-state current helps to reduce power consumption when the FET is not being used. The wide frequency range of operation makes it suitable for use in applications such as high gain amplifiers, radio frequency power amplifiers, RF switches and high frequency stages of amplifiers. The wide operating temperature range of -55 to +175 degrees Celsius makes it suitable for use in harsh environmental conditions.The BLP8G10S-45PJ FET also has a good transverse power gain, which is an important parameter for a high gain amplifier. The transverse power gain is defined as the ratio of output power of the amplifier to the input power of the amplifier. A good transverse power gain helps to improve the efficiency of the circuit and increase the output power of the amplifier.The BLP8G10S-45PJ FET is also capable of operating at temperatures up to +175 degrees Celsius. This makes it suitable for use in high temperature environments such as down hole drilling and oil refineries. The FET can also be used in automotive applications such as head-up displays and brushless DC motors.The BLP8G10S-45PJ also has a low thermal resistance, which is helpful in dissipating the heat generated by the FET during operation. The low thermal resistance helps to keep the temperature of the circuit components at acceptable levels and reduce the risk of them getting damaged due to excessive heat.In conclusion, the BLP8G10S-45PJ is a widely used FET in RF applications due to its high speed operation, low off-state current, wide frequency range and wide temperature range. It has a good transverse power gain, which makes it suitable for use in high gain amplifiers and RF switches. The low thermal resistance helps to dissipate the heat generated during operation, and makes it suitable for use in high temperature environments.

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