Allicdata Part #: | BP104F-ND |
Manufacturer Part#: |
BP 104 F |
Price: | $ 0.21 |
Product Category: | Sensors, Transducers |
Manufacturer: | OSRAM Opto Semiconductors Inc. |
Short Description: | PHOTODIODE 950NM W/FILTER THRU |
More Detail: | Photodiode 950nm 20ns 120° Radial - 2 Leads |
DataSheet: | BP 104 F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19193 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Wavelength: | 950nm |
Color - Enhanced: | -- |
Spectral Range: | 800nm ~ 1100nm |
Diode Type: | PIN |
Responsivity @ nm: | -- |
Response Time: | 20ns |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Dark (Typ): | 2nA |
Active Area: | 4.84mm² |
Viewing Angle: | 120° |
Operating Temperature: | -40°C ~ 100°C |
Mounting Type: | Through Hole |
Package / Case: | Radial - 2 Leads |
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Optical sensors detect changes in visible, infrared, and ultraviolet light using an electronic receiver system known as a photodetector, which transforms light into an electrical current. The BP 104 F photodiode is a light-sensitive diode that converts light into an electric current. Its wide variety of applications makes it suitable for a variety of communication, sensing, and control systems.
The BP 104 F photodiode offers high-speed response, low dark current, high power conversion efficiency, and temperature stable photoconductive characteristics. It is designed to be used for short-wave infrared (SWIR) detection and has an operating temperature range between -40°C to 120°C. It is constructed with a PN junction of silicon that is sensitive to light in the 900 nm to 1700 nm wavelength range.
The BP 104 F photodiode has a block dome optical lens that improves regeneration of the infrared photodiode on a silicon substrate. The design of this photodiode allows for a high aspect ratio design, resulting in a more efficient photoelectric element for various optical link applications. It also has a lightweight and compact design which makes it suitable for small applications where space and weight are a consideration.
The BP 104 F photodiode offers superior performance in terms of speed and response time. It also has a high power conversion efficiency that makes it suitable for optical communication and control applications. It has a low dark current that ensures high sensitivity to light signals, even in dark environments. This makes it an ideal choice for applications such as optical switches, data reception, and laser ranging.
The BP 104 F photodiode operates using the Photo electric effect, which explains the emission or absorption of electrons when light is shined on a material. When the photodiode is exposed to light, electrons are emitted from the material and create a current. This current is then sent to the input of an amplifier in order to be processed. The photodiode then amplifies the current and it is then sent out to the electronic device. This current is then used to control the desired output device.
The BP 104 F photodiode is a highly versatile and reliable device that is used in many communication, sensing, and control systems. It offers high-speed response, low dark current, high power conversion efficiency, and temperature-stable photoconductive characteristics. This makes it suitable for communication applications such as optical switches, data reception, and laser ranging. It is also a compact and lightweight device, making it suitable for use in applications where space or weight is a concern. It is sure to meet the demands of many applications and provide reliable performance.
The specific data is subject to PDF, and the above content is for reference
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