BR24G02FVM-3GTTR Allicdata Electronics
Allicdata Part #:

BR24G02FVM-3GTTR-ND

Manufacturer Part#:

BR24G02FVM-3GTTR

Price: $ 0.08
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 2K I2C 400KHZ 8MSOP
More Detail: EEPROM Memory IC 2Kb (256 x 8) I²C 400kHz 8-MSOP
DataSheet: BR24G02FVM-3GTTR datasheetBR24G02FVM-3GTTR Datasheet/PDF
Quantity: 3000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: BR24G02
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BR24G02FVM-3GTTR is a type of high-capacity memory device used in many applications ranging from industrial systems to personal electronics. It is used to provide a high degree of reliability in storing critical data while being fast and low-power enough to fit in to a wide array of applications. The size of the memory device also makes it a great choice for embedded or handheld systems. In this article, we will explore its application field and working principle.

The BR24G02FVM-3GTTR is an ideal choice for devices with a small form factor such as embedded systems and hand-held devices. Its compact size makes it easy to fit the memory device into any design. Its reduced power consumption makes it an excellent choice for battery-powered devices, since it will reduce the device’s overall power consumption and increase its battery life. Additionally, its high-capacity and fast read/write speeds make it suitable for applications that require data to be read quickly and stored reliably.

The BR24G02FVM-3GTTR memory device utilizes a NAND flash technology that offers greater storage capacity than many other memory types. The NAND flash technology also requires less power to operate, which is beneficial for long-term battery life of a device. Additionally, the device’s fast read/write speeds allow it to quickly store and retrieve data, making it well-suited for high-performance applications. As an added benefit, the BR24G02FVM-3GTTR also supports error correction, ensuring that all data stored on the device is reliable.

The BR24G02FVM-3GTTR utilizes a simple working principle. It works by utilizing floating gate cells and tunnel electric fields, which are electrically isolated from each other and then programmed. The tunnel electric fields allow current to pass through the floating gate cells, and when the current is reversed, it causes the cells to store information. When a read operation is performed, the stored information is extracted from the cells and then stored in the BR24G02FVM-3GTTR memory device. This allows for both quick and reliable storage and retrieval of data.

Overall, the BR24G02FVM-3GTTR is an ideal choice for devices with a small form factor, such as embedded systems and hand-held devices. Its high-capacity, fast read/write speeds, and low-power consumption make it an excellent choice for critical applications that require reliable and quick data storage and retrieval. Additionally, the BR24G02FVM-3GTTR utilizes a simple working principle that allows it to quickly and reliably store and retrieve data. As a result, the BR24G02FVM-3GTTR is an ideal choice for any device requiring reliable data storage and retrieval in a small form factor.

The specific data is subject to PDF, and the above content is for reference

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