![BSC034N06NSATMA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
BSC034N06NSATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSC034N06NSATMA1TR-ND |
Manufacturer Part#: |
BSC034N06NSATMA1 |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 100A 8TDSON |
More Detail: | N-Channel 60V 100A (Tc) 2.5W (Ta), 74W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.47093 |
Vgs(th) (Max) @ Id: | 3.3V @ 41µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSC034N06NSATMA1 is a single N-Channel MOSFET that is used in many applications and industries. This type of MOSFET is known for its high efficiency, low power consumption, and low leakage current. It is able to function at a maximum drain-source voltage of 30V, a maximum gate-source voltage of 30V, and a maximum drain current of 34A. The features that make the BSC034N06NSATMA1 such an ideal choice for a wide range of applications include:
- A low on-resistance to ensure a high degree of efficiency.
- A low gate threshold voltage to prevent any switching delay.
- A low capacitance, which is beneficial for switching high frequencies without added losses.
- High input impedance, providing error-free operation.
The BSC034N06NSATMA1 is primarily used in the industrial and automotive markets. In the industrial market, it is often used in high-power lighting, motor drives, and solar inverters. Some automotive applications include electronic fuel injection, spark plug control, anti-lock brakes, engine control, and traction control.
The working principle of the BSC034N06NSATMA1 is based on the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The MOSFET is a four-terminal device with a gate, source, drain and body. It is an electronic switch which is capable of allowing or blocking the flow of current between the drain and source. The source is the electrical power supply for the circuitry, while the drain is the output of the circuitry. The gate controls the amount of current flowing between the source and drain.
When the gate is supplied with a positive voltage, electrons flow from the source to the drain, resulting in a voltage drop across the drain-source. This in turn controls the amount of current flowing through the load. Conversely, when a negative voltage is supplied to the gate (VGS), electrons flow from the drain to the source, resulting in a voltage increase across the drain-source. This results in the current flow through the load being interrupted. The gate voltage can be used to control the amount of current flowing through the load in either direction.
The BSC034N06NSATMA1 is a versatile and powerful device which can be used in many applications. Its high efficiency, low power consumption, and low leakage current make it the ideal choice for a range of industrial and automotive applications. By understanding its working principles, designers and engineers can take advantage of its features and capabilities to create efficient, reliable and cost-effective systems.
The specific data is subject to PDF, and the above content is for reference
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