BSC110N06NS3GATMA1

Vgs(th) (Max) @ Id:	4V @ 23µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2700pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	11 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BSC110N06NS3GATMA1 is a single, N-Channel power MOSFET with a low on-state resistance and high switching frequency. It can be used in a wide range of applications, including industrial, automotive, and consumer electronics. The device has a maximum drain-source voltage of 60V, a maximum drain current of 6A, and an RDS(on) of 0.025 Ohm.The BSC110N06NS3GATMA1 is a Enhancement Mode MOSFET and is optimized for applications requiring high switching speed and a low on-state resistance. It has a built-in gate charge reduction circuitry which reduces switching power and operation current.The BSC110N06NS3GATMA1 is designed for applications such as high efficiency, low loss switching power supplies, motor control, home appliance controls and more. It has an easily controlled gate-source threshold voltage and offers improved load dump characteristics as well as improved EMI filters.The BSC110N06NS3GATMA1 features a low on-state resistance, which ensures efficient operation and less conduction losses. It is also capable of switching at high frequencies, making it suitable for high speed applications. The device is also designed to withstand very large transient loads and can be used in a variety of operating conditions. It is capable of operating with temperature ranges from -55°C to 150°C.The working principle of the BSC110N06NS3GATMA1 is that when a voltage is applied to the gate terminal, a charge is transferred to the gate oxide and this creates a conductive channel between the drain and source. This conductive channel allows current to flow that is dependent on the voltage applied to the gate terminal. By varying the voltage applied to the gate terminal, the conductive channel can be designed to have different resistance values, thus allowing the MOSFET to be used for a variety of purposes.The MOSFET can be used in a variety of applications such as switching regulators, power inverters, motor control, and more. It is an effective device for controlling high power circuits and provides lower power consumption compared to other components such as bipolar transistors. It can also be used in synchronous rectification and as an efficient switch when controlling high current load devices.In summary, the BSC110N06NS3GATMA1 is a single N-Channel power MOSFET designed for applications requiring high switching speeds, low on-state resistances and improved EMI filter capability. It has a low voltage drive, high switching speed and high current capability which make it suitable for a wide range of applications such as power supplies, motor drives, home appliance controllers, and more. It features excellent load dump characteristics and can operate with a temperature range of -55°C to 150°C. The working principle of the MOSFET is based on the controlled creation of a conductive channel between the gate and the source, allowing current to flow dependent on the applied voltage.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description